Resistive switching effects in oxide sandwiched structures

Frontiers of Materials Science

Volumn 6, Issue 3, 2012, Pages 183-206

  Zhu, Xiao Jian ^a   Shang, Jie ^a   Li, Run Wei ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

filaments; oxide film; quantum conductance; resistive random access memory (RRAM); resistive switching (RS)

Indexed keywords

EID: 84866061554     PISSN: 2095025X     EISSN: 20950268     Source Type: Journal    
DOI: 10.1007/s11706-012-0170-8     Document Type: Review

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