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Applied Physics Letters

Volumn 94, Issue 24, 2009, Pages

Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

(4) Nagashima, Kazuki a Yanagida, Takeshi a,b Oka, Keisuke a Kawai, Tomoji a

a OSAKA UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; METAL-OXIDE; OHMIC BEHAVIOR; RESISTIVE SWITCHING; ROOM TEMPERATURE; SCHOTTKY BEHAVIORS; SNO2 FILMS; SNO2 THIN FILMS; THREE-TERMINAL DEVICES; UNIPOLAR OPERATION;

ELECTRODES; OXIDE FILMS; PLATINUM; SWITCHING SYSTEMS; TRANSPORT PROPERTIES;

STRUCTURAL METALS;

EID: 67649199320 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3156863 Document Type: Article

Times cited : (107)

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