SCOPUS 정보 검색 플랫폼

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 765-783

Resistance switching memories are memristors

(1) Chua, Leon a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS AND DESIGN; BINARY BITS; CONTOUR SHAPE; CURRENT SOURCES; DEVICE MATERIALS; EQUILIBRIUM STATE; GAS DISCHARGE; INPUT VOLTAGE SOURCES; MAGNETIC TUNNEL JUNCTION; MEMRISTOR; NANO DEVICE; NANO MEMORIES; NON-VOLATILE; NONVOLATILE MEMORY DEVICES; ON-RESISTANCE; OPERATING MECHANISM; PHYSICAL MECHANISM; POWER CONVERSION; RESISTANCE SWITCHING; SINE-WAVE; SPIN TRANSFER; STRAIGHT LINES;

EQUIPMENT; HYSTERESIS; HYSTERESIS LOOPS; MAGNETIC MATERIALS; MEMRISTORS; MERCURY (METAL); RESISTORS; TUNNEL JUNCTIONS;

PASSIVE FILTERS;

EID: 79952950219 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-011-6264-9 Document Type: Article

Times cited : (1252)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.