A new dynamic selector based on the bipolar rram for the crossbar array application

IEEE Transactions on Electron Devices

Volumn 59, Issue 8, 2012, Pages 2277-2280

  Huang, Yinglong ^a   Huang, Ru ^a   Pan, Yue ^a   Zhang, Lijie ^a   Cai, Yimao ^a   Yang, Gengyu ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Nonvolatile memory; resistive switching; RRAM; selector

Indexed keywords

CROSSBAR ARRAYS; DYNAMIC SELECTORS; HIGH DENSITY MEMORY; HIGH-DENSITY INTEGRATION; INTEGRATION DENSITY; NON-VOLATILE MEMORIES; RESISTIVE SWITCHING; RRAM; SELECTOR; TESTING RESULTS;

PLATINUM;

RANDOM ACCESS STORAGE;

EID: 84864757903     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2201158     Document Type: Article

References (14)

1. M.-J. Lee, Y. Park, B.-S. Kang, S.-E. Ahn, C. B. Lee, K. Kim,W. Xianyu, G. Stefanovich, J.-H. Lee, S.-J. Chung, Y.-H. Jim, C.-S. Lee, and J.-B. Park, "2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications," in IEDM Tech. Dig. , 2007, pp. 771-774.
2. B. S. Kang, S.-E. Ahn, M.-J. Lee, G. Stefanovich, K. H. Kim, W. X. Xianyu, C. B. Lee, Y. Park, I. G. Baek, and B. H. Park, "Highcurrent- density CuOx/InZnOx thin-film diodes for cross-point memory applications," Adv. Mater. , vol. 20, no. 16, pp. 3066-3069, Aug. 2008.
3. W. Y. Park, G. H. Kim, J. Y. Seok, K. M. Kim, S. J. Song, M. H. Lee, and C. S. Hwang, "A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays," IEEE Trans. Nanotechnol. , vol. 21, no. 3, pp. 195 201-195 205, Apr. 2010.
4. S.-E. Ahn, B. S. Kang, K. H. Kim, M.-J. Lee, C. B. Lee, G. Stefanovich, C. J. Kim, and Y. Park, "Stackable all-oxide-based nonvolatile memory with Al2O3 anti-fuse and p-CuOx/n-InZnOx diode," IEEE Electron Device Lett. , vol. 30, no. 5, pp. 550-552, May 2009.
5. J.-J. Huang, Y.-M. Tseng, C.-W. Hsu, and T.-H. Hou, "Bipolar nonlinear Ni/TiO2/Ni selector for1S1R crossbar array applications," IEEE Electron Device Lett. , vol. 32, no. 10, pp. 1427-1460, Oct. 2011.
6. J. Shin, I. Kim, K. P. Biju, M. Jo, J. Park, J. Lee, S. Jung, W. Lee, S. Kim, S. Park, and H. Hwang, "TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application," J. Appl. Phys. , vol. 109, no. 3, pp. 033712-1-033712-4, Feb. 2011.
7. M.-J. Lee, S. Seo, D.-C. Kim, S.-E. Ahn, D. H. Seo, I.-K. Yoo, I.-G. Baek, D.-S. Kim, I.-S. Byun, S.-H. Kim, I.-R. Hwang, J.-S. Kim, S.-H. Jeon, and B. H. Park, "A low-temperature-grown oxide diode as a new switch element for high-density nonvolatile memories," Adv. Mater. , vol. 19, no. 16, pp. 73-76, Dec. 2007. (Pubitemid 46144812)
8. S.-E. Ahn, B. S. Kang, K. H. Kim, M.-J. Lee, C. B. Lee, G. Stefanovich, C. J. Kim, and Y. Park, "Stackable all-oxide-based nonvolatile memory with Al2O3 antifuse and p-CuOx/n-InZnOx diode," IEEE Electron Device Lett. , vol. 32, no. 10, pp. 550-552, May 2009.
9. J.-J. Huang, C.-W. Kuo, W.-C. Chang, and T.-H. Hou, "Transition of stable rectification to resistive-switching in Ti/TiO2/Pt," Appl. Phys. Lett. , vol. 96, no. 26, pp. 262901-1-262901-3, Jun. 2010.
10. L. Zhang and R. Huang, "A MIM diode with ultra abrupt switching process and high on/off current ratio," in Proc. 219th ECS Meeting, 2011, pp. 923-929.
11. E. Linn, R. Rosezin, C. Kügeler, and R. Waser, "Complementary resistive switches for passive nano-crossbar memories," Nat. Mater. , vol. 9, no. 5, pp. 403-406, May 2010.
12. Y.-C. Chen, C. F. Chen, C. T. Chen, J. Y. Yu, S. Wu, S. L. Lung, R. Liu, and C.-Y. Lu, "An access-transistor-free (OT/lR) non-volatile resistance random access memory (RRAM) using a novel threshold switching selfrectifying chalcogenide device," in IEDM Tech. Dig. , 2003, pp. 905-908.
13. C. J. Amsinck, N. H. Di Spigna, D. P. Nackashi, and P. D. Franzon, "Scaling constraints in nanoelectronic random-access memories," IEEE Trans. Nanotechnol. , vol. 16, no. 3, pp. 2251-2260, Aug. 2005. (Pubitemid 41376166)
14. A. Flocke and T. G. Noll, "Fundamental analysis of resistive nanocrossbars for the use in hybrid nano/CMOS-memory," in Proc. 33rd ESSCIRC, 2007, pp. 328-331.