Resistive switching in nanostructured thin films

Applied Physics Letters

Volumn 94, Issue 20, 2009, Pages

  Silva, H ^a,b   Gomes, H L ^a   Pogorelov, Yu G ^b   Stallinga, P ^a   De Leeuw, D M ^c   Araujo, J P ^b   Sousa, J B ^b   Meskers, S C J ^d   Kakazei, G ^b   Cardoso, S ^e   Freitas, P P ^e  

^a UNIVERSITY OF ALGARVE   (Portugal)

^b UNIVERSITY OF PORTO   (Portugal)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^e INESC   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVE SWITCHING; CONDUCTANCE STATE; ELECTRICAL FIELD; FERROMAGNETIC GRAIN; FORMING PROCESS; GRANULAR FILM; INDEPENDENT STATE; MATRIX; NANOMETRIC; NANOSTRUCTURED THIN FILM; PLANAR CAPACITORS; RESISTANCE RATIO; RESISTIVE SWITCHING; SWITCHING PROPERTIES;

SWITCHING SYSTEMS;

SWITCHING;

EID: 65949091589     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3134484     Document Type: Article

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