Modeling the universal set/reset characteristics of bipolar RRAM by field- and temperature-driven filament growth

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4309-4317

  Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Device modeling; metal insulator transition; nonvolatile memory; oxide electronics; resistive switching memory (RRAM)

Indexed keywords

CHALCOGENIDE GLASS; COMPLIANCE CURRENT; CONDUCTIVE FILAMENTS; CRITICAL STEPS; DEVICE MODELING; EXPERIMENTAL SETUP; FILAMENT FORMATION; ION MIGRATION; METAL OXIDES; MIGRATION PARAMETERS; NONVOLATILE MEMORY; NUMERICAL MODELS; OXIDE ELECTRONICS; PHYSICAL PICTURES; PHYSICALLY BASED; RESET CURRENTS; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; RESISTIVE SWITCHING MEMORY (RRAM); SWITCHING MECHANISM; THERMALLY ACTIVATED;

CONDUCTIVE MATERIALS; GROWTH (MATERIALS); MATHEMATICAL MODELS; METAL INSULATOR BOUNDARIES; PHASE CHANGE MEMORY; SEMICONDUCTOR INSULATOR BOUNDARIES; SWITCHING; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 82155166369     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2167513     Document Type: Article

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