The quantum point-contact memristor

IEEE Electron Device Letters

Volumn 33, Issue 10, 2012, Pages 1474-1476

  Miranda, E ^a   Jimenez, D ^a   Sune, J ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Memristor; resistive switching; RRAM

Indexed keywords

CONTINUOUS MODULATION; CURRENT LIMITS; DEVICES AND SYSTEMS; ELECTRON CHARGE; MEMRISTOR; NANO SCALE; NON-VOLATILE MEMORIES; PLANCK CONSTANTS; POTENTIAL PROFILES; QUANTUM CONDUCTANCE; RESISTIVE SWITCHING; RRAM; TRANSMISSION PROBABILITIES;

PASSIVE FILTERS; QUANTUM CHEMISTRY; RANDOM ACCESS STORAGE; RESISTORS;

MEMRISTORS;

EID: 84866900482     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2210185     Document Type: Article

References (19)

1. R. Smith, Smart Material Systems: Model Development (Frontiers in Applied Mathematics). Philadelphia, PA: SIAM, 2005.
2. D. Strukov, G. Snider, D. Stewart, and S. Williams, "The missing memristor found," Nature, vol. 453, no. 7191, pp. 80-83, May 2008.
3. Y. Pershin and M. Di Ventra, "Memory effects in complex materials and nanoscale systems," Adv. Phys., vol. 60, pp. 145-227, 2011.
4. L. Chua and S. Kang, "Memristive devices and systems," Proc. IEEE, vol. 64, no. 2, pp. 209-223, Feb. 1976.
5. T. Prodromakis, C. Toumazou, and L. Chua, "Two centuries of memristors," Nat. Mat., vol. 11, no. 6, pp. 478-481, Jun. 2012.
6. L. Chua, "Resistance switching memories are memristors," Appl. Phys. A, vol. 102, no. 4, pp. 765-783, 2011.
7. B. Mouttet, Memresistors and non-memristive zero crossing hysteresis curves, 2012, arXiv:1201.2626v2, unpublished paper.
8. V. Zhirnov, R. Meade, R. Cavin, and G. Sandhu, "Scaling limits of resistive memories," Nanotechnology, vol. 22, no. 25, p. 254 027, Jun. 2011.
9. E. Miranda and J. Suñé, "Analytic modeling of leakage current through multiple breakdown paths in SiO2 films," in Proc. IRPS, 2001, pp. 367-379.
10. E. Miranda, C. Walczyk, C. Wenger, and T. Schroeder, "Model for the resistive switching effect in HfO2 MIM structures based on the transmission properties of narrow constrictions," IEEE Electron Dev Lett, vol. 31, no. 6, pp. 609-611, Jun. 2010.
11. R. Degraeve, P. Roussel, L. Goux, D. Wouters, J. Kittl, L. Altimime, M. Jurczak, and G. Groeseneken, "Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments," in Proc. IEDM, 2010, pp. 28.4.1-28.4.4.
12. J. Wagenaar, M. Morales-Masis, and J. van Ruitenbeek, "Observing 'quantized' conductance steps in silver sulfide: Two parallel resistive switching mechanisms," J. Appl. Phys., vol. 111, no. 1, p. 014302, Jan. 2012.
13. J. Jameson, N. Gilbert, F. Koushan, J. Saenz, J. Wang, S. Hollmer, M. Kozicki, and N. Derhacobian, "Quantized conductance in Ag/GeS2/W conductive-bridge memory cells," IEEE Electron Device Lett., vol. 33, no. 2, pp. 257-259, Feb. 2012.
14. F. Miao, D. Ohlberg, R. S. Williams, and C. N. Lau, " Characterization of quantum conducting channels in metal/molecule/metal devices using pressure-modulated conductance microscopy," Appl. Phys. A, Mater. Sci. Process., vol. 102, no. 4, pp. 943-948, Mar. 2011.
15. S. Datta, Electronic Transport inMesoscopic Systems. Cambridge, U.K.: Cambridge Univ. Press, 1997.
16. K. Hansen and M. Brandbyge, "Current-voltage relation for thin tunnel barriers: Parabolic barrier model," J. Appl. Phys., vol. 95, no. 7, pp. 3582-3586, Apr. 2004.
17. S. Lee, H. Kim, D. Yun, S. Rhee, and K. Yong, "Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices," Appl. Phys. Lett., vol. 95, no. 26, p. 262 113, Dec. 2009.
18. N. Agrait, A. Levy Yeyati, and J. van Ruitenbeek, "Quantum properties of atomic sized conductors," Phys. Rep., vol. 377, no. 2/3, pp. 81-279, Apr. 2003.
19. D. Biolek, Z. Biolek, and V. Biolkova, "Pinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be 'self-crossing'," Electron. Lett., vol. 47, no. 25, pp. 1385-1387, Dec. 2011.