Field-induced resistive switching in metal-oxide interfaces

Applied Physics Letters

Volumn 85, Issue 2, 2004, Pages 317-319

  Tsui, S ^a   Baikalov, A ^a   Cmaidalka, J ^a   Sun, Y Y ^a   Wang, Y Q ^a   Xue, Y Y ^a   Chu, C W ^a,b,c   Chen, L ^a   Jacobson, A J ^a  

^a University of Houston   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PULSES; IMPEDANCE SPECTROSCOPY (IS); METAL-OXIDES INTERFACES; RESISTIVE SWITCHING;

CAPACITANCE; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRIC CHARGE; ELECTRIC FIELDS; ELECTRIC IMPEDANCE; ELECTRODES; ELECTRON TRAPS; INTERFACES (MATERIALS); MOS DEVICES; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS;

SWITCHING CIRCUITS;

EID: 3242892591     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1768305     Document Type: Article

References (16)

1. S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. 76, 2749 (2000).
2. A. Baikalov, Y. Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y. Y. Sun, Y. Y. Xue, and C. W. Chu, Appl. Phys. Lett. 83, 957 (2003).
3. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000).
4. Y. Watanabe, J. G. Bednorz, A. Bietsch, Ch. Gerber, D. Widmer, and A. Beck, Appl. Phys. Lett. 78, 3738 (2001).
5. N. A. Tulina, A. M. Ionov, and A. N. Chaika, Physica C 366, 23 (2001).
6. N. A. Tulina, S. A. Zver'kov, A. Arsenov, Y. M. Mukovskii, and D. A. Shulyatev, Physica C 385, 563 (2003).
7. C. Rossel, G. I. Meijer, D. Bremaud, and D. Widmer, J. Appl. Phys. 90, 2892 (2001).
8. For example, S. Yamaguchi, Y. Okimoto, H. Taniguchi, and Y. Tokura, Phys. Rev. B 53, 2926 (1996).
9. For example, D. C. Sinclair, T. B. Adams, F. D. Morrison, and A. R. West, Appl. Phys. Lett. 80, 2153 (2002).
10. The upper limit of the bulk PCMO ε can be estimated as ≪ 10 through the observed capacitance across an Ag/PCMO/Pt multilayer film by using the film thickness as d. We tentatively take this value to be the upper limit of the interfacial ε.
11. For a review, Y. Watanabe, Phys. Rev. B 59, 11257 (1999); G. R. Fox and S. B. Krupanidhi, J. Appl. Phys. 74, 1949 (1993); K. C. Kao and W. Hwang, Electrical Transport in Solids (Pergamon, Oxford, 1981); and N. F. Mott and R. W. Gurney, Electronic Processes in Ionic Crystals (Dover, New York, 1940).
12. For a review, Y. Watanabe, Phys. Rev. B 59, 11257 (1999); G. R. Fox and S. B. Krupanidhi, J. Appl. Phys. 74, 1949 (1993); K. C. Kao and W. Hwang, Electrical Transport in Solids (Pergamon, Oxford, 1981); and N. F. Mott and R. W. Gurney, Electronic Processes in Ionic Crystals (Dover, New York, 1940).
13. For a review, Y. Watanabe, Phys. Rev. B 59, 11257 (1999); G. R. Fox and S. B. Krupanidhi, J. Appl. Phys. 74, 1949 (1993); K. C. Kao and W. Hwang, Electrical Transport in Solids (Pergamon, Oxford, 1981); and N. F. Mott and R. W. Gurney, Electronic Processes in Ionic Crystals (Dover, New York, 1940).
14. For a review, Y. Watanabe, Phys. Rev. B 59, 11257 (1999); G. R. Fox and S. B. Krupanidhi, J. Appl. Phys. 74, 1949 (1993); K. C. Kao and W. Hwang, Electrical Transport in Solids (Pergamon, Oxford, 1981); and N. F. Mott and R. W. Gurney, Electronic Processes in Ionic Crystals (Dover, New York, 1940).
15. A. Rose, Phys. Rev. 97, 1538 (1955).
16. M. A. Lampert, Phys. Rev. 103, 1648 (1956).