-
1
-
-
54949089222
-
Write current reduction in transition metal oxide based resistance-change memory
-
Mar.
-
S.-E. Ahn, M.-J. Lee, Y. Park, B. S. Kang, C. B. Lee, K. H. Kim, S. Seo, D.-S. Suh, D.-C. Kim, J. Hur, W. Xianyu, G. Stefanovich, H. Yin, I.-K. Yoo, J.-H. Lee, J.-B. Park, I.-G. Baek, and B. H. Park, "Write current reduction in transition metal oxide based resistance-change memory," Adv. Mater., vol. 20, no. 5, pp. 924-928, Mar. 2008.
-
(2008)
Adv. Mater.
, vol.20
, Issue.5
, pp. 924-928
-
-
Ahn, S.-E.1
Lee, M.-J.2
Park, Y.3
Kang, B.S.4
Lee, C.B.5
Kim, K.H.6
Seo, S.7
Suh, D.-S.8
Kim, D.-C.9
Hur, J.10
Xianyu, W.11
Stefanovich, G.12
Yin, H.13
Yoo, I.-K.14
Lee, J.-H.15
Park, J.-B.16
Baek, I.-G.17
Park, B.H.18
-
2
-
-
77953023010
-
Model for the resistive switching effect in HfO2 MIM structures based on the transmission properties of narrow constrictions
-
Jun.
-
E. A. Miranda, C. Walczyk, C. Wenger, and T. Schroeder, "Model for the resistive switching effect in HfO2 MIM structures based on the transmission properties of narrow constrictions," IEEE Electron Device Lett., vol. 31, no. 6, pp. 609-611, Jun. 2010.
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.6
, pp. 609-611
-
-
Miranda, E.A.1
Walczyk, C.2
Wenger, C.3
Schroeder, T.4
-
3
-
-
77953028392
-
Pulse-programming instabilities of unipolar-type NiOx
-
Jun.
-
D.-K. Kim, D.-S. Suh, and J. Park, "Pulse-programming instabilities of unipolar-type NiOx," IEEE Electron Device Lett., vol. 31, no. 6, pp. 600-602, Jun. 2010.
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.6
, pp. 600-602
-
-
Kim, D.-K.1
Suh, D.-S.2
Park, J.3
-
4
-
-
43349101629
-
Random circuit breaker network model for unipolar resistance switching
-
Mar.
-
S. C. Chae, J. S. Lee, S. Kim, S. B. Lee, S. H. Chang, C. Liu, B. Kahng, H. Shin, D.-W. Kim, C. U. Jung, S. Seo, M.-J. Lee, and T. W. Noh, "Random circuit breaker network model for unipolar resistance switching," Adv. Mater., vol. 20, no. 6, pp. 1154-1159, Mar. 2008.
-
(2008)
Adv. Mater.
, vol.20
, Issue.6
, pp. 1154-1159
-
-
Chae, S.C.1
Lee, J.S.2
Kim, S.3
Lee, S.B.4
Chang, S.H.5
Liu, C.6
Kahng, B.7
Shin, H.8
Kim, D.-W.9
Jung, C.U.10
Seo, S.11
Lee, M.-J.12
Noh, T.W.13
-
5
-
-
58949104009
-
Occurrence of both unipolar memory and threshold resistance switching in a NiO film
-
Jan.
-
S. H. Chang, J. S. Lee, S. C. Chae, S. B. Lee, C. Liu, B. Kahng, D.-W. Kim, and T. W. Noh, "Occurrence of both unipolar memory and threshold resistance switching in a NiO film," Phy. Rev. Lett., vol. 102, no. 2, p. 026 801, Jan. 2009.
-
(2009)
Phy. Rev. Lett.
, vol.102
, Issue.2
, pp. 026801
-
-
Chang, S.H.1
Lee, J.S.2
Chae, S.C.3
Lee, S.B.4
Liu, C.5
Kahng, B.6
Kim, D.-W.7
Noh, T.W.8
-
6
-
-
77958463591
-
Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model
-
K. M. Kim, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, and C. S. Hwang, "Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model," Appl. Phys. Lett., vol. 97, no. 16, p. 162 912, 2010.
-
(2010)
Appl. Phys. Lett.
, vol.97
, Issue.16
, pp. 162912
-
-
Kim, K.M.1
Lee, M.H.2
Kim, G.H.3
Song, S.J.4
Seok, J.Y.5
Yoon, J.H.6
Hwang, C.S.7
-
7
-
-
77649188644
-
In situ observation of compliance-current overshoot and its effect on resistive switching
-
Mar.
-
H. J. Wan, P. Zhou, L. Ye, Y. Y. Lin, T. A. Tang, H. M. Wu, and M. H. Chi, "In situ observation of compliance-current overshoot and its effect on resistive switching," IEEE Electron Device Lett., vol. 31, no. 3, pp. 246-248, Mar. 2010.
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.3
, pp. 246-248
-
-
Wan, H.J.1
Zhou, P.2
Ye, L.3
Lin, Y.Y.4
Tang, T.A.5
Wu, H.M.6
Chi, M.H.7
-
8
-
-
51949093158
-
A unified physical model of switching behavior in oxide-based RRAM
-
N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and B. Yu, "A unified physical model of switching behavior in oxide-based RRAM," in VLSI Symp. Tech. Dig., 2008, pp. 100-101.
-
(2008)
VLSI Symp. Tech. Dig.
, pp. 100-101
-
-
Xu, N.1
Gao, B.2
Liu, L.F.3
Sun, B.4
Liu, X.Y.5
Han, R.Q.6
Kang, J.F.7
Yu, B.8
-
9
-
-
67650507837
-
Charging effect and capacitance modulation of Ni-rich NiO thin film
-
Jul.
-
R. Ang, T. P. Chen, Z. Liu, J. I. Wong, M. D. Yi, M. Yang, Z. H. Cen, S. Zhu,W. Zhu, and E. S. Goh, "Charging effect and capacitance modulation of Ni-rich NiO thin film," Appl Phys Lett., vol. 95, no. 1, p. 012 104, Jul. 2009.
-
(2009)
Appl Phys Lett.
, vol.95
, Issue.1
, pp. 012104
-
-
Ang, R.1
Chen, T.P.2
Liu, Z.3
Wong, J.I.4
Yi, M.D.5
Yang, M.6
Cen, Z.H.7
Zhuw. Zhu, S.8
Goh, E.S.9
-
10
-
-
0031071188
-
XPS and AES studies of the Cr/Al2O3 interface
-
Feb.
-
H. Lu, D. H. Shen, C. L. Bao, and Y. X. Wang, "XPS and AES studies of the Cr/Al2O3 interface," Phys. Stat. Sol. (A), vol. 159, no. 2, pp. 425-437, Feb. 1997.
-
(1997)
Phys. Stat. Sol. (A)
, vol.159
, Issue.2
, pp. 425-437
-
-
Lu, H.1
Shen, D.H.2
Bao, C.L.3
Wang, Y.X.4
-
11
-
-
68249151084
-
Nonvolatile-memory characteristics of AlO-Implanted Al2O3
-
Aug.
-
M. C. Kim, S. Kim, S.-H. Choi, K. Belay, R. G. Elliman, and S. P. Russo, "Nonvolatile-memory characteristics of AlO-Implanted Al2O3," IEEE Electron Device Lett., vol. 30, no. 8, pp. 837-839, Aug. 2009.
-
(2009)
IEEE Electron Device Lett.
, vol.30
, Issue.8
, pp. 837-839
-
-
Kim, M.C.1
Kim, S.2
Choi, S.-H.3
Belay, K.4
Elliman, R.G.5
Russo, S.P.6
-
12
-
-
19944434155
-
Reproducible resistance switching in polycrystalline NiO films
-
Dec.
-
S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh, Y. S. Joung, I. Yoo, I. R. Hwang, S. H. Kim, I.-S. Byun, J. S. Kim, J. S. Choi, and B. H. Park, "Reproducible resistance switching in polycrystalline NiO films," Appl. Phys. Lett., vol. 85, no. 23, pp. 5655-5657, Dec. 2004.
-
(2004)
Appl. Phys. Lett.
, vol.85
, Issue.23
, pp. 5655-5657
-
-
Seo, S.1
Lee, M.J.2
Seo, D.H.3
Jeoung, E.J.4
Suh, D.S.5
Joung, Y.S.6
Yoo, I.7
Hwang, I.R.8
Kim, S.H.9
Byun, I.-S.10
Kim, J.S.11
Choi, J.S.12
Park, B.H.13
-
13
-
-
0037415948
-
Crystallization behavior of thin ALD-Al2O3 films
-
Feb.
-
S. Jakschik, U. Schroeder, T. Hecht, M. Gutshe, H. Seidl, and J.W. Bartha, "Crystallization behavior of thin ALD-Al2O3 films," Thin Solid Films, vol. 425, no. 1/2, pp. 216-220, Feb. 2003.
-
(2003)
Thin Solid Films
, vol.425
, Issue.1-2
, pp. 216-220
-
-
Jakschik, S.1
Schroeder, U.2
Hecht, T.3
Gutshe, M.4
Seidl, H.5
Bartha, J.W.6
-
14
-
-
33750428912
-
Resistive switching in Pt/Al2O3/TiO2/Ru stacked structures
-
K. M. Kim, B. J. Choi, B.W. Koo, S. Choi, D. S. Jeong, and C. S. Hwang, "Resistive switching in Pt/Al2O3/TiO2/Ru stacked structures," Electrochem. Solid State Lett., vol. 9, no. 12, pp. G343-G346, 2006.
-
(2006)
Electrochem. Solid State Lett.
, vol.9
, Issue.12
-
-
Kim, K.M.1
Choi, B.J.2
Koo, B.W.3
Choi, S.4
Jeong, D.S.5
Hwang, C.S.6
-
15
-
-
70350732732
-
Filamentary resistive switching localized at cathode interface in NiO thin films
-
Oct.
-
K. M. Kim, B. J. Choi, S. J. Song, G. H. Kim, and C. S. Hwang, "Filamentary resistive switching localized at cathode interface in NiO thin films," J. Electrochem. Soc., vol. 156, no. 12, pp. G213-G216, Oct. 2009.
-
(2009)
J. Electrochem. Soc.
, vol.156
, Issue.12
-
-
Kim, K.M.1
Choi, B.J.2
Song, S.J.3
Kim, G.H.4
Hwang, C.S.5
-
16
-
-
77954144619
-
Improved resistive switching reliability in graded NiO multilayer for resistive nonvolatile memory devices
-
Jul.
-
M. J. Lee, C. B. Lee, D. Lee, S. R. Lee, J. Hur, S. E. Ahn, M. Chang, Y. B. Kim, U. I. Chung, C. J. Kim, D. S. Kim, and H. Lee, "Improved resistive switching reliability in graded NiO multilayer for resistive nonvolatile memory devices," IEEE Electron Device Lett., vol. 31, no. 7, pp. 725-727, Jul. 2010.
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.7
, pp. 725-727
-
-
Lee, M.J.1
Lee, C.B.2
Lee, D.3
Lee, S.R.4
Hur, J.5
Ahn, S.E.6
Chang, M.7
Kim, Y.B.8
Chung, U.I.9
Kim, C.J.10
Kim, D.S.11
Lee, H.12
-
17
-
-
76649133422
-
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
-
D. H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. S. Li, G. S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, "Atomic structure of conducting nanofilaments in TiO2 resistive switching memory," Nat. Nanotechnol., vol. 5, pp. 148-153, 2010.
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 148-153
-
-
Kwon, D.H.1
Kim, K.M.2
Jang, J.H.3
Jeon, J.M.4
Lee, M.H.5
Kim, G.H.6
Li, X.S.7
Park, G.S.8
Lee, B.9
Han, S.10
Kim, M.11
Hwang, C.S.12
-
18
-
-
79951951303
-
A high-yield HfOx-based unipolar resistive RAM employing Ni electrode compatible with Si-diode selector for crossbar integration
-
Mar.
-
X. A. Tran, H. Y. Yu, Y. C. Yeo, L.Wu, W. J. Liu, Z. R. Wang, Z. Fang, K. L. Pey, X.W. Sun, A. Y. Du, B. Y. Nguyen, and M. F. Li, "A high-yield HfOx-based unipolar resistive RAM employing Ni electrode compatible with Si-diode selector for crossbar integration," IEEE Electron Device Lett., vol. 32, no. 3, pp. 396-398, Mar. 2011.
-
(2011)
IEEE Electron Device Lett.
, vol.32
, Issue.3
, pp. 396-398
-
-
Tran, X.A.1
Yu, H.Y.2
Yeo, Y.C.3
Wu, L.4
Liu, W.J.5
Wang, Z.R.6
Fang, Z.7
Pey, K.L.8
Sun, X.W.9
Du, A.Y.10
Nguyen, B.Y.11
Li, M.F.12
|