Multiterminal memristive nanowire devices for logic and memory applications: A review

Proceedings of the IEEE

Volumn 100, Issue 6, 2012, Pages 2008-2020

  Sacchetto, Davide ^a   De Micheli, Giovanni ^a   Leblebici, Yusuf ^a  

^a EPFL   (Switzerland)

Author keywords

Ambipolar; memristor; nanowire; Schottky barrier; transistor

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER CIRCUITS; DIELECTRIC DEVICES; METALLIC COMPOUNDS; METALS; MOS DEVICES; MOSFET DEVICES; NANOWIRES; OXIDE SEMICONDUCTORS; SCHOTTKY BARRIER DIODES; SILICON; STATIC RANDOM ACCESS STORAGE; TRANSISTORS;

AMBIPOLAR; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; HIGH INTEGRATION DENSITY; MEMORY APPLICATIONS; MEMRISTOR; SCHOTTKY BARRIERS; SENSING APPLICATIONS; TWO-TERMINAL DEVICES;

MEMRISTORS;

EID: 84861199856     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2011.2172569     Document Type: Conference Paper

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