Resistance controllability of Ta2O5/TiO2 stack ReRAM for low-voltage and multilevel operation

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 204-206

  Terai, M ^a   Sakotsubo, Y ^a   Kotsuji, S ^a   Hada, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

1T1R; Filament; Multilevel; Resistive random access memory (ReRAM); Resistive switch; RRAM; Ta2O5; TiO2

Indexed keywords

1T1R; CUT-OFF; HIGH RESISTANCE; HISTORY EFFECTS; LOW RESISTANCE; LOW-VOLTAGE; RESET VOLTAGE; RESISTIVE RANDOM ACCESS MEMORY; SET VOLTAGE; SWITCHING MECHANISM; TIO; TUNNEL BARRIER; VOLTAGE OPERATIONS;

CONTROLLABILITY; FILAMENTS (LAMP); SWITCHING SYSTEMS; TANTALUM;

RANDOM ACCESS STORAGE;

EID: 77649178908     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2039021     Document Type: Article

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