High ON/OFF ratio and quantized conductance in resistive switching of TiO2 on silicon

IEEE Electron Device Letters

Volumn 34, Issue 11, 2013, Pages 1385-1387

  Hu, Chengqing ^a   McDaniel, Martin D ^a   Ekerdt, John G ^a   Yu, Edward T ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Conductive filament (CF); metal oxide; nonvolatile memory; quantized conductance (QC); resistive random access memory (RRAM); resistive switching (RS); titanium dioxide

Indexed keywords

CONDUCTIVE FILAMENTS; METAL OXIDES; NON-VOLATILE MEMORY; QUANTIZED CONDUCTANCE; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING;

ATOMIC LAYER DEPOSITION; QUANTUM ELECTRONICS; RANDOM ACCESS STORAGE; SILICON; SWITCHING SYSTEMS; THIN FILMS;

TITANIUM DIOXIDE;

EID: 84887257553     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2282154     Document Type: Article

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