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Volumn 101, Issue 5, 2012, Pages

Study of polarity effect in SiOx-based resistive switching memory

(8) Chang, Yao Feng a Chen, Pai Yu a Chen, Yen Ting a Xue, Fei a Wang, Yanzhen a Zhou, Fei a Fowler, Burt b Lee, Jack C a

a The University of Texas at Austin (United States)

b PrivaTran LLC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; TANTALUM COMPOUNDS;

ELECTRICAL RELIABILITY; LOW-RESISTANCE STATE; NON-VOLATILE MEMORY APPLICATION; POLARITY DEPENDENCE; POST DEPOSITION ANNEALING; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; SWITCHING PARAMETERS;

SWITCHING;

EID: 84864686265 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4742894 Document Type: Article

Times cited : (56)

References (17)

1
- 84863020678
- 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation
- 2011 IEEE International Electron Devices Meeting, IEDM 2011; Washington, DC; United States; 5 December 2011 through 7 December 2011; Category numberCFP11IED-USB; Code 88420
- B. Govoreanu, G. S. Kar, Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I. P. Radu, L. Goux, S. Clima, R. Degraeve, N. Jossart, O. Richard, T. Vandeweyer, K. Seo, P. Hendrickx, G. Pourtois, H. Bender, L. Altimime, D. J. Wouters, J. A. Kittl, and M. Jurczak, 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation. Technical Digest - International Electron Devices Meeting, IEDM., 2011, 6131652, 31.6.1-31.6.4. DOI: 10.1109/IEDM.2011.6131652
- (2011) Technical Digest - International Electron Devices Meeting, IEDM , pp. 31.6.1-31.6.4
- Govoreanu, B.¹ Kar, G.S.² Chen, Y.³ Paraschiv, V.⁴ Kubicek, S.⁵ Fantini, A.⁶ Radu, I.P.⁷ Goux, L.⁸ Clima, S.⁹ Degraeve, R.¹⁰ Jossart, N.¹¹ Richard, O.¹² Vandeweyer, T.¹³ Seo, K.¹⁴ Hendrickx, P.¹⁵ Pourtois, G.¹⁶ Bender, H.¹⁷ Altimime, L.¹⁸ Wouters, D.J.¹⁹ Kittl, J.A.²⁰ Jurczak, M.²¹ more..

2
- 84864133905
- M. J. Kang, T. J. Park, Y. W. Kwon, D. H. Ahn, Y. S. Kang, H. Jeong, S. J. Ahn, Y. J. Song, B. C. Kim, S. W. Nam, H. K. Kang, G. T. Jeong, and C. H. Chung, Tech. Dig.-Int. Electron Devices Meet. 2011, 39.
- (2011) Tech. Dig. - Int. Electron Devices Meet. , pp. 39
- Kang, M.J.¹ Park, T.J.² Kwon, Y.W.³ Ahn, D.H.⁴ Kang, Y.S.⁵ Jeong, H.⁶ Ahn, S.J.⁷ Song, Y.J.⁸ Kim, B.C.⁹ Nam, S.W.¹⁰ Kang, H.K.¹¹ Jeong, G.T.¹² Chung, C.H.¹³

3
- 84855250778
- 10.1016/S1369-7021(11)70302-9
- T. C. Chang, F. Y. Jian, S. C. Chen, and Y. T. Tsai, Mater. Today 14, P526 (2011). 10.1016/S1369-7021(11)70302-9
- (2011) Mater. Today , vol.14 , pp. 526
- Chang, T.C.¹ Jian, F.Y.² Chen, S.C.³ Tsai, Y.T.⁴

4
- 58149144433
- 10.1063/1.3045951
- J. Yao, L. Zhong, D. Natelson, and J. M. Tour, Appl. Phys. Lett. 93, 253101 (2008). 10.1063/1.3045951
- (2008) Appl. Phys. Lett. , vol.93 , pp. 253101
- Yao, J.¹ Zhong, L.² Natelson, D.³ Tour, J.M.⁴

5
- 77958042599
- 10.1021/nl102255r
- J. Yao, Z. Sun, L. Zhong, D. Natelson, and J. M. Tour, Nano Lett. 10, 4105 (2010). 10.1021/nl102255r
- (2010) Nano Lett. , vol.10 , pp. 4105
- Yao, J.¹ Sun, Z.² Zhong, L.³ Natelson, D.⁴ Tour, J.M.⁵

6
- 67650102619
- 10.1002/adma.200900375
- R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009). 10.1002/adma.200900375
- (2009) Adv. Mater. , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

7
- 66049123723
- R. Waser, Tech. Dig.-Int. Electron Devices Meet. 2008, 289.
- (2008) Tech. Dig. - Int. Electron Devices Meet. , pp. 289
- Waser, R.¹

8
- 84863234917
- 10.1063/1.3687724
- Y. Wang, Y. T. Chen, F. Xue, F. Zhou, Y. F. Chang, B. Fowler, and J. C. Lee, Appl. Phys. Lett. 100, 083502 (2012). 10.1063/1.3687724
- (2012) Appl. Phys. Lett. , vol.100 , pp. 083502
- Wang, Y.¹ Chen, Y.T.² Xue, F.³ Zhou, F.⁴ Chang, Y.F.⁵ Fowler, B.⁶ Lee, J.C.⁷

9
- 37749007146
- 10.1103/PhysRevB.77.035105
- I. H. Inoue, S. Yasuda, H. Akinaga, and H. Takagi, Phys. Rev. B 77, 035105 (2008). 10.1103/PhysRevB.77.035105
- (2008) Phys. Rev. B , vol.77 , pp. 035105
- Inoue, I.H.¹ Yasuda, S.² Akinaga, H.³ Takagi, H.⁴

10
- 59849127081
- 10.1109/TED.2008.2010584
- U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, IEEE Trans. Electron Devices 56, 193 (2009). 10.1109/TED.2008.2010584
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 193
- Russo, U.¹ Ielmini, D.² Cagli, C.³ Lacaita, A.L.⁴

11
- 22144448904
- 10.1063/1.1968416
- C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J. S. Zhao, and C. S. Hwang, Appl. Phys. Lett. 86, 262907 (2005). 10.1063/1.1968416
- (2005) Appl. Phys. Lett. , vol.86 , pp. 262907
- Rohde, C.¹ Choi, B.J.² Jeong, D.S.³ Choi, S.⁴ Zhao, J.S.⁵ Hwang, C.S.⁶

12
- 84864649849
- W. H. Liu, K. L. Pey, X. Li, and M. Bosman, Tech. Dig.-Int. Electron Devices Meet. 2009, 135.
- (2009) Tech. Dig. - Int. Electron Devices Meet. , pp. 135
- Liu, W.H.¹ Pey, K.L.² Li, X.³ Bosman, M.⁴

13
- 0034261329
- 10.1103/PhysRevB.62.6158
- P. E. Blöchl, Phys. Rev. B 62, 6158 (2000). 10.1103/PhysRevB.62.6158
- (2000) Phys. Rev. B , vol.62 , pp. 6158
- Blöchl, P.E.¹

14
- 79951959814
- 10.1109/LED.2010.2099096
- N. Raghavan, K. L. Pey, X. Wu, W. Liu X. Li, M. Bosman, and T. Kauerauf, IEEE Electron Device Lett. 32, 252 (2011). 10.1109/LED.2010.2099096
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 252
- Raghavan, N.¹ Pey, K.L.² Wu, X.³ Liu, W.⁴ Li, X.⁵ Bosman, M.⁶ Kauerauf, T.⁷

15
- 0032094867
- 10.1007/s11837-998-0131-y
- W. S. Williams, JOM 50, 62 (1998). 10.1007/s11837-998-0131-y
- (1998) JOM , vol.50 , pp. 62
- Williams, W.S.¹

16
- 84862972514
- 10.1063/1.3672098
- E. B. Grayeli, Z. Li, M. Asheghi, G. Delgado, A. Pokrovsky, M. Panzer, D. Wack, and K. E. Goodson, Appl. Phys. Lett. 99, 261906 (2011). 10.1063/1.3672098
- (2011) Appl. Phys. Lett. , vol.99 , pp. 261906
- Grayeli, E.B.¹ Li, Z.² Asheghi, M.³ Delgado, G.⁴ Pokrovsky, A.⁵ Panzer, M.⁶ Wack, D.⁷ Goodson, K.E.⁸

17
- 80052958489
- 10.1063/1.3630119
- Y. F. Chang, T. C. Chang, and C. Y. Chang, J. Appl. Phys. 110, 053703 (2011). 10.1063/1.3630119
- (2011) J. Appl. Phys. , vol.110 , pp. 053703
- Chang, Y.F.¹ Chang, T.C.² Chang, C.Y.³

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