Tuning resistive switching characteristics of tantalum oxide memristors through Si doping

ACS Nano

Volumn 8, Issue 10, 2014, Pages 10262-10269

  Kim, Sungho ^a   Choi, Shinhyun ^a   Lee, Jihang ^a   Lu, Wei D ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

dopant; hopping; memristor; oxygen vacancy; resistive switching; tantalum oxide

Indexed keywords

CALCULATIONS; DOPING (ADDITIVES); IONS; MEMRISTORS; SILICON; STRUCTURAL DESIGN; STRUCTURAL OPTIMIZATION; SWITCHING; TANTALUM OXIDES;

AB INITIO CALCULATIONS; DEVICE STRUCTURE OPTIMIZATION; HOPPING; MEMRISTOR; NEUROMORPHIC COMPUTING; RESISTIVE SWITCHING; SPIKE TIMING DEPENDENT PLASTICITIES; SWITCHING CHARACTERISTICS;

OXYGEN VACANCIES;

EID: 84908424046     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503464q     Document Type: Article

References (31)

1. Strukov, D. B.; Snider, G. S.; Stewart, D. R.; Williams, R. S. The Missing Memristor Found Nature 2008, 453, 80-83
2. Chua, L. O. Memristor-The Missing Circuit Element IEEE Trans. Circuit Theory 1971, 18, 507-519
3. Chua, L. O. The Fourth Element Proc. IEEE 2012, 100, 1920-1927
4. Borghetti, J.; Snider, G. S.; Kuekes, P. J.; Yang, J. J.; Stewart, D. R.; Williams, R. S. Memristive Switches Enable Stateful Logic Operations via Material Implication Nature 2010, 464, 873-876
5. Yang, J. J.; Strukov, D. B.; Stewart, D. R. Memristive Devices for Computing Nat. Nanotechnol. 2013, 8, 13-24
6. Jo, S. H.; Chang, T.; Ebong, I.; Bhadviya, B. B.; Mazumder, P.; Lu, W. Nanoscale Memristor Device as Synapse in Neuromorphic Systems Nano Lett. 2010, 10, 1297-1301
7. Zamarreno-Ramos, C.; Camunas-Mesa, L. A.; Perez-Carrasco, J. A.; Masquelier, T.; Serrano-Gotarredona, T.; Linares-Barranco, B. On Spike-Timing-Dependent-Plasticity, Memristive Devices, and Building a Self-Learning Visual Cortex Front. Neurosci. 2011, 5, 26
8. Yu, S.; Wu, Y.; Jeyasingh, R.; Kuzum, D.; Wong, H.-S. P. An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation IEEE Trans. Electron Devices 2011, 58, 2729-2737
9. Ielmini, D. Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth IEEE Trans. Electron Devices 2011, 58, 4309-4317
10. x Memristive Devices Appl. Phys. Lett. 2010, 97, 232102
11. 2- x Bilayer Structures Nat. Mater. 2011, 10, 625-630
12. x RRAM Devices Phys. Status Solidi A 2012, 209, 1179-1183
13. Yang, Y.; Choi, S.; Lu, W. Oxide Heterostructure Resistive Memory Nano Lett. 2013, 13, 2908-2915
14. x Multilayer-Based Forming-Free RRAM Devices with Excellent Uniformity IEEE Electron Device Lett. 2011, 32, 566-568
15. x RRAM Characteristics: A Systematic Study. 2013 Symposium on VLSI Technology, Kyoto, Japan, June 11-13, 2013; pp 106-107.
16. 2 Based Resistive Switching Memory Devices Using Implantation Approach Appl. Phys. Lett. 2011, 98, 042105
17. 2 Resistive Switching Memory Appl. Phys. Lett. 2010, 96, 123502
18. Kim, S.; Choi, S. H.; Lu, W. Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor ACS Nano 2014, 8, 2369-2376
19. Strukov, D. B.; Williams, R. S. Exponential Ionic Drift: Fast Switching and Low Volatility of Thin-Film Memristors Appl. Phys. A: Mater. Sci. Process. 2009, 94, 515-519
20. Fromhold, A. T.; Cook, E. L. Diffusion Currents in Large Electric Fields for Discrete Lattices J. Appl. Phys. 1967, 38, 1546-1553
21. Jo, S. H.; Kim, K. H.; Lu, W. Programmable Resistance Switching in Nanoscale Two-Terminal Devices Nano Lett. 2009, 9, 496-500
22. Ambrogio, S.; Balatti, S.; Gilmer, D. C.; Ielmini, D. Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches IEEE Trans. Electron Devices 2014, 61, 2378-2385
23. Miao, F.; Yang, J. J.; Strachan, J. P.; Stewart, D.; Williams, R. S.; Lau, C. N. Force Modulation of Tunnel Gaps in Metal Oxide Memristive Nanoswitches Appl. Phys. Lett. 2009, 95, 113503
24. 3/Ti/CuTe-Based 1T1R CBRAM System. 2012 Symposium on VLSI Technology, Honolulu, Hawaii, June 12-14, 2012; pp 69-70.
25. Bear, M. F.; Malenka, R. C. Synaptic Plasticity: LTP and LTD Curr. Opin. Neurobiol. 1994, 4, 389-399
26. Gaba, S.; Sheridan, P.; Zhou, J.; Choi, S.; Lu, W. Stochastic Memristive Device for Computing and Neuromorphic Applications Nanoscale 2013, 5, 5872-5878
27. Yu, S.; Guan, X.; Wong, H. S. P. On the Switching Parameter Variation of Metal Oxide RRAM-Part II: Model Corroboration and Device Design Strategy IEEE Trans. Electron Devices 2012, 59, 1183-1188
28. x Resistive-Switching Memory: Part I-Set/Reset Variability IEEE Trans. Electron Devices 2014, 61, 2912-2919
29. Abbott, L. F.; Nelson, S. B. Synaptic Plasticity: Taming the Beast Nat. Neurosci. 2000, 3, 1178-1183
30. Roberts, P. D.; Bell, C. C. Spike Timing Dependent Synaptic Plasticity in Biological Systems Biol. Cybern. 2002, 87, 392-403
31. Li, Y.; Zhong, Y.; Xu, L.; Zhang, J.; Xu, X.; Sun, H.; Miao, X. Ultrafast Synaptic Events in a Chalcogenide Memristor Sci. Rep. 2013, 3, 1619