Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO 3/SrRuO3 switches

Applied Physics Letters

Volumn 105, Issue 8, 2014, Pages

  Miranda, E ^a   Jimenez D ^a   Tsurumaki Fukuchi, A ^b   Blasco, J ^a   Yamada, H ^b,c   Sune J ^a   Sawa, A ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; HYSTERESIS; SCHOTTKY BARRIER DIODES;

BARRIER LOWERING; CLOSED TRAJECTORY; DIODE-LIKE CONDUCTION; HYSTERETIC BEHAVIOR; POLARIZATION REVERSALS; SCHOTTKY BARRIER HEIGHTS; SERIES RESISTANCES; VARYING PARAMETERS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84907363541     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4894116     Document Type: Article

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