Evidence for voltage-driven set/reset processes in bipolar switching RRAM

IEEE Transactions on Electron Devices

Volumn 59, Issue 8, 2012, Pages 2049-2056

  Ielmini, Daniele ^a   Nardi, Federico ^a   Balatti, Simone ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Filamentary switching; resistive switching random access memory (RRAM); thermally activated ion migration model

Indexed keywords

ANALYTICAL CALCULATION; APPLIED VOLTAGES; COMPLIANCE CURRENT; CONTROLLING PARAMETERS; EXPERIMENTAL STUDIES; FILAMENT FORMATION; ION MIGRATION; METAL OXIDES; PHYSICAL MECHANISM; RANDOM ACCESS MEMORIES; RESISTANCE CHANGE; RESISTIVE SWITCHING; TIME DEPENDENCE; TIME-DEPENDENT; VOLTAGE DEPENDENCE;

DISSOLUTION; SWITCHING;

RANDOM ACCESS STORAGE;

EID: 84864751007     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2199497     Document Type: Article

References (46)

1. I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, and J. T. Moon, "Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses," in IEDM Tech. Dig., 2004, pp. 587-590. (Pubitemid 40928360)
2. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories: Nanoionic mechanisms, prospects, and challenges," Adv. Mater., vol. 21, no. 25/26, pp. 2632-2663, Jul. 2009.
3. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, no. 7191, pp. 80-83, May 2008. (Pubitemid 351630336)
4. J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart, and R. S. Williams, "'Memristive' switches enable 'stateful' logic operations via material implication," Nature, vol. 464, no. 7290, pp. 873-876, Apr. 2010.
5. R. Rosezin, E. Linn, C. Kuegeler, R. Bruchhaus, and R. Waser, "Crossbar logic using bipolar and complementary resistive switches," IEEE Electron Device Lett., vol. 32, no. 6, pp. 710-712, Jun. 2011.
6. D. Ielmini, C. Cagli, and F. Nardi, "Resistance transition in metal oxides induced by electronic threshold switching," Appl. Phys. Lett., vol. 94, no. 6, pp. 063511-1-063511-3, Feb. 2009.
7. H. Y. Lee, Y. S. Chen, P. S. Chen, T. Y. Wu, F. Chen, C. C. Wang, P. J. Tzeng, M.-J. Tsai, and C. Lien, "Low-power and nanosecond switching in robust hafnium oxide resistive memory with a thin Ti cap," IEEE Electron Device Lett., vol. 31, no. 1, pp. 44-46, Jan. 2010.
8. H. Y. Lee, Y. S. Chen, P. S. Chen, P. Y. Gu, Y. Y. Hsu, S. M. Wang, W. H. Liu, C. H. Tsai, S. S. Sheu, P. C. Chiang, W. P. Lin, C. H. Lin, W. S. Chen, F. T. Chen, C. H. Lien, and M. Tsai, "Evidence and solution of over-reset problem for HfOx based resistive memory with sub-ns switching speed and high endurance," in IEDM Tech. Dig., 2010, pp. 460-463.
9. 2 based RRAM," in IEDM Tech. Dig., 2008, pp. 297-300.
10. C. Ho, C.-L. Hsu, C.-C. Chen, J.-T. Liu, C.-S. Wu, C.-C. Huang, C. Hu, and F.-L. Yang, "9 nm half-pitch functional resistive memory cell with 1 μA programming current using thermally oxidized sub-stoichiometric WOx film," in IEDM Tech. Dig., 2010, pp. 436-439.
11. Y. Wu, B. Lee, and H. S. P. Wong, "Al2O3-based RRAM using atomic layer deposition (ALD) with 1-μA reset current," IEEE Electron Device Lett., vol. 31, no. 12, pp. 1449-1451, Dec. 2010.
12. F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, and D. J. Wouters, "Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories," Solid State Electron., vol. 58, no. 1, pp. 42-47, Apr. 2011.
13. B. Govoreanu, G. S. Kar, Y.-Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I. P. Radu, L. Goux, S. Clima, R. Degraeve, N. Jossart, O. Richard, T. Vandeweyer, K. Seo, P. Hendrickx, G. Pourtois, H. Bender, L. Altimime, D. J. Wouters, J. A. Kittl, and M. Jurczak, "10 × 10 nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation," in IEDM Tech. Dig., 2011, pp. 729-732.
14. J. J. Yang, M.-X. Zhang, J. P. Strachan, F. Miao, M. D. Pickett, R. D. Kelley, G. Medeiros-Ribeiro, and R. S. Williams, "High switching endurance in TaOx memristive devices," Appl. Phys. Lett., vol. 97, no. 23, pp. 232 102-1-232 102-3, Dec. 2010.
15. M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y.-B. Kim, C.-J. Kim, D. H. Seo, S. Seo, U.-I. Chung, I.-K. Yoo, and K. Kim, "A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures," Nat. Mater., vol. 10, no. 8, pp. 625-630, Jul. 2011.
16. M.-J. Lee, Y. Park, B.-S. Kang, S.-E. Ahn, C. Lee, K. Kim,W. Xianyu, and G. Stefanovich, "2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications," in IEDM Tech. Dig., 2007, pp. 771-774.
17. D. C. Kim, M. J. Lee, S. E. Ahn, S. Seo, J. C. Park, I. K. Yoo, I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U.-I. Chung, J. T. Moon, and B. I. Ryu, "Improvement of resistive memory switching in NiO using IrO2," Appl. Phys. Lett., vol. 88, no. 23, pp. 232 106-1-232 106-3, Jun. 2006.
18. D. Ielmini, "Reset-set instability in unipolar resistive switching memory," IEEE Electron Device Lett., vol. 31, no. 6, pp. 552-554, Jun. 2010.
19. D.-K. Kim, D.-S. Suh, and J. Park, "Pulse-programming instabilities of unipolar-Type NiOx," IEEE Electron Device Lett., vol. 31, no. 6, pp. 600-602, Jun. 2010.
20. F. Nardi, C. Cagli, S. Spiga, and D. Ielmini, "Reset instability in pulsedoperated unipolar resistive switching memory," IEEE Electron Device Lett., vol. 32, no. 6, pp. 719-721, Jun. 2011.
21. E. Linn, R. Rosezin, C. Kuegeler, and R.Waser, "Complementary resistive switches for passive nanocrossbar memories," Nat. Mater., vol. 9, no. 5, pp. 403-406, May 2010.
22. J. Lee, J. Shin, D. Lee, W. Lee, S. Jung, M. Jo, J. Park, K. P. Biju, S. Kim, S. Park, and H. Hwang, "Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications," in IEDM Tech. Dig., 2010, pp. 452-455.
23. F. Nardi, S. Balatti, S. Larentis, and D. Ielmini, "Complementary switching in metal oxides: Toward diode-less crossbar RRAMs," in IEDM Tech. Dig., 2011, pp. 709-712.
24. V. V. Zhirnov, R. K. Cavin, S. Menzel, E. Linn, S. Schlmezer, D. Brauhaus, C. Schindler, and R. Waser, "Memory devices: Energy-space-Time tradeoffs," Proc. IEEE, vol. 98, no. 12, pp. 2185-2200, Dec. 2010.
25. D. Ielmini, "Filamentary-switching model in RRAM for time, energy and scaling projections," in IEDM Tech. Dig., 2011, pp. 409-412.
26. D. C. Gilmer, G. Bersuker, H.-Y. Park, C. Park, B. Butcher, W. Wang, P. D. Kirsch, and R. Jammy, "Effects of RRAM stack configuration on forming voltage and current overshoot," in Proc. IMW, 2011, pp. 123-126.
27. D. Ielmini, F. Nardi, and C. Cagli, "Universal reset characteristics of unipolar and bipolar metal-oxide RRAM," IEEE Trans. Electron Devices, vol. 58, no. 10, pp. 3246-3253, Oct. 2011.
28. T.-N. Fang, S. Kaza, S. Haddad, A. Chen, Y.-C. Wu, Z. Lan, S. Avanzino, D. Liao, C. Gopalan, S. Choi, S. Mahdavi, M. Buynoski, Y. Lin, C. Marrian, C. Bill, M. VanBuskirk, and M. Taguchi, "Erase mechanism for copper oxide resistive switching memory cells with nickel electrode," in IEDM Tech. Dig., 2006, pp. 788-792.
29. J. Park, S. Jung, J. Lee,W. Lee, S. Kim, J. Shin, and H. Hwang, "Resistive switching characteristics of ultra-Thin TiOx," Microelectron. Eng., vol. 88, no. 7, pp. 1136-1139, Jul. 2011.
30. K. Kinoshita, K. Tsunoda, Y. Sato, H. Noshiro, S. Yagaki, M. Aoki, and Y. Sugiyama, "Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance," Appl. Phys. Lett., vol. 93, no. 3, pp. 033506-1-033506-3, Jul. 2008.
31. K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, and Y. Sugiyama, "Low power and high speed switching of Ti-doped NiO ReRAM under the unipolar voltage source of less than 3 V," in IEDM Tech. Dig., 2007, pp. 767-770.
32. D. Ielmini, "Modeling the universal set/reset characteristics of bipolar RRAM by field-And temperature-driven filament growth," IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4309-4317, Dec. 2011.
33. U. Russo, D. Kamalanathan, D. Ielmini, A. L. Lacaita, andM. N. Kozicki, "Study of multilevel programming in programmable metallization cell (PMC) memory," IEEE Trans. Electron Devices, vol. 56, no. 5, pp. 1040-1047, May 2009.
34. S. Yu and H.-S.Wong, "Compact modeling of conducting-bridge randomaccess memory (CBRAM)," IEEE Trans. Electron Devices, vol. 58, no. 5, pp. 1352-1360, May 2011.
35. R. Meyer, L. Schloss, J. Brewer, R. Lambertson, W. Kinney, J. Sanchez, and D. Rinerson, "Oxide dual-layer memory element for scalable non-volatile cross-point memory technology," in Proc. NVMTS, 2008, pp. 54-58.
36. D. Ielmini, R. Bruchhaus, and R. Waser, "Thermochemical resistive switching: Materials, mechanisms, and scaling projections," Phase Transitions, vol. 84, no. 7, pp. 570-602, Jul. 2011.
37. S. Menzel, M. Waters, A. Marchewka, U. Böttger, R. Dittmann, and R.Waser, "Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches," Adv. Funct. Mater., vol. 21, no. 23, pp. 4487-4492, Dec. 2011.
38. D. Ielmini, F. Nardi, and C. Cagli, "Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories," Nanotechnology, vol. 22, no. 25, p. 254 022, Jun. 2011.
39. C. Cagli, F. Nardi, and D. Ielmini, "Modeling of set/reset operations in NiO-based resistive-switching memory RRAM devices," IEEE Trans. Electron Devices, vol. 56, no. 8, pp. 1712-1720, Aug. 2009.
40. S. Larentis, C. Cagli, F. Nardi, and D. Ielmini, "Filament diffusion model for simulating reset and retention processes in RRAM," Microelectron. Eng., vol. 88, no. 7, pp. 1119-1123, Jul. 2011.
41. S. Yu, Y. Wu, and H.-S. P. Wong, "Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory," Appl. Phys. Lett., vol. 98, no. 10, pp. 103 514-1-103 514-3, Mar. 2011.
42. F. Chen, H. Y. Lee, Y. S. Chen, Y. Y. Hsu, L. J. Zhang, P. S. Chen, W. S. Chen, P. Y. Gu, W. H. Liu, S. M. Wang, C. H. Tsai, S. S. Sheu, M. J. Tsai, and R. Huang, "Resistance switching for RRAM applications," Sci. China Inf. Sci., vol. 54, no. 5, pp. 1073-1086, May 2011.
43. Y.-C. Chen, C. F. Chen, C. T. Chen, J. Y. Yu, S. Wu, S. L. Lung, R. Liu, and C.-Y. Lu, "An access-Transistor-free (0R/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device," in IEDM Tech. Dig., 2003, pp. 905-908.
44. D. Ielmini, F. Nardi, C. Cagli, and A. L. Lacaita, "Size-dependent retention time in NiO-based resistive switching memories," IEEE Electron Device Lett., vol. 31, no. 4, pp. 353-355, Apr. 2010.
45. S. Yu, X. Guan, and H.-S. P. Wong, "On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization," in IEDM Tech. Dig., 2011, pp. 413-416.
46. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, "Self-Accelerated thermal dissolution model for reset programming in unipolar resistiveswitching memory (RRAM) devices," IEEE Trans. Electron Devices, vol. 56, no. 2, pp. 193-200, Feb. 2009.