Conductance quantization in oxygen-anion-migration-based resistive switching memory devices

Applied Physics Letters

Volumn 103, Issue 4, 2013, Pages

  Chen, C ^a   Gao, S ^a   Zeng, F ^a   Wang, G Y ^a   Li, S Z ^a   Song, C ^a   Pan, F ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; CONDUCTANCE QUANTIZATION; DATA STORAGE; NON-VOLATILE MEMORY; QUANTIZED CONDUCTANCE; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; VOLTAGE PULSE;

IONS; QUANTUM ELECTRONICS; TANTALUM OXIDES;

TANTALUM;

EID: 84885007314     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816747     Document Type: Article

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