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Applied Physics Letters

Volumn 95, Issue 6, 2009, Pages

Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications

(3) Choi, Ji Hyuk a Das, Sachindra Nath a Myoung, Jae Min a

a Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT TRANSPORT MECHANISM; DOUBLE LAYERS; MEMORY DEVICE; NON-VOLATILE MEMORY APPLICATION; ON/OFF RATIO; OPERATION VOLTAGE; PERCOLATION PATH; RESISTANCE SWITCHING; RESISTIVE SWITCHING; THICKNESS VARIATION;

ELECTRIC POTENTIAL; SILICON COMPOUNDS; SOLVENTS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 69049093929 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3204450 Document Type: Article

Times cited : (21)

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