-
2
-
-
84871772858
-
Memristive devices for computing
-
J. J. Yang, D. B. Strukov, and D. R. Stewart, "Memristive devices for computing," Nat. Nanotechnol., vol. 8, pp. 13-24, 2013.
-
(2013)
Nat. Nanotechnol.
, vol.8
, pp. 13-24
-
-
Yang, J.J.1
Strukov, D.B.2
Stewart, D.R.3
-
3
-
-
84876354591
-
The parallel approach
-
M. Di Ventra and Y. V. Pershin, "The parallel approach," Nat. Phys., vol. 9, pp. 200-202, 2013.
-
(2013)
Nat. Phys.
, vol.9
, pp. 200-202
-
-
Di Ventra, M.1
Pershin, Y.V.2
-
4
-
-
79956159040
-
Electrochemical metallization memories-fundamentals, applications, prospects
-
I. Valov, R. Waser, J. R. Jameson, and M. N. Kozicki, "Electrochemical metallization memories-fundamentals, applications, prospects," Nanotechnology, vol. 22, p. 254003, 2011.
-
(2011)
Nanotechnology
, vol.22
, pp. 254003
-
-
Valov, I.1
Waser, R.2
Jameson, J.R.3
Kozicki, M.N.4
-
5
-
-
67650102619
-
Redox-based resistive switching memories-nanoionic mechanisms, prospects, challenges
-
R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories-nanoionic mechanisms, prospects, challenges," Adv. Mater., vol. 21, pp. 2632-2663, 2009.
-
(2009)
Adv. Mater.
, vol.21
, pp. 2632-2663
-
-
Waser, R.1
Dittmann, R.2
Staikov, G.3
Szot, K.4
-
6
-
-
0016918810
-
Memristive devices and systems
-
L. O. Chua and S. M. Kang, "Memristive devices and systems," Proc. IEEE, vol. 64, pp. 209-223, 1976.
-
(1976)
Proc. IEEE
, vol.64
, pp. 209-223
-
-
Chua, L.O.1
Kang, S.M.2
-
7
-
-
43049126833
-
The missing memristor found
-
DOI 10.1038/nature06932, PII NATURE06932
-
D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, pp. 80-83, 2008. (Pubitemid 351630336)
-
(2008)
Nature
, vol.453
, Issue.7191
, pp. 80-83
-
-
Strukov, D.B.1
Snider, G.S.2
Stewart, D.R.3
Williams, R.S.4
-
8
-
-
0015127532
-
Memristor-The missing circuit element
-
L. O. Chua, "Memristor-the missing circuit element," IEEE Trans. Circuit Theory, vol. CT-18, pp. 507-519, 1971.
-
(1971)
IEEE Trans. Circuit Theory, Vol.
, vol.CT-18
, pp. 507-519
-
-
Chua, L.O.1
-
9
-
-
79952950219
-
Resistance switching memories are memristors
-
L. O. Chua, "Resistance switching memories are memristors," Appl. Phys. A-Mater. Sci. Process., vol. 102, pp. 765-783, 2011.
-
(2011)
Appl. Phys. A-Mater. Sci. Process
, vol.102
, pp. 765-783
-
-
Chua, L.O.1
-
10
-
-
79956096432
-
TiO-A prototypical memristive material
-
K. Szot,M. Rogala, W. Speier, Z. Klusek, A. Besmehn, and R. Waser, " TiO-A prototypical memristive material," Nanotechnology, vol. 22, p. 254001, 2011.
-
(2011)
Nanotechnology
, vol.22
, pp. 254001
-
-
Szot, K.1
Rogala, M.2
Speier, W.3
Klusek, Z.4
Besmehn, A.5
Waser, R.6
-
11
-
-
77950852717
-
Memristive switches enable stateful logic operations via material implication
-
J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart, and R. S. Williams, "Memristive switches enable stateful logic operations via material implication," Nature, vol. 464, pp. 873-876, 2010.
-
(2010)
Nature
, vol.464
, pp. 873-876
-
-
Borghetti, J.1
Snider, G.S.2
Kuekes, P.J.3
Yang, J.J.4
Stewart, D.R.5
Williams, R.S.6
-
12
-
-
84858961119
-
Memristor bridge synapses
-
Jun.
-
H. Kim, M. Pd. Sah, C. Yang, T. Roska, and L. O. Chua, "Memristor bridge synapses," Proc. IEEE, vol. 100, no. 6, pp. 2061-2070, Jun. 2012.
-
(2012)
Proc. IEEE
, vol.100
, Issue.6
, pp. 2061-2070
-
-
Kim, H.1
Pd. Sah, M.2
Yang, C.3
Roska, T.4
Chua, L.O.5
-
14
-
-
84871285395
-
Analysis of current-voltage characteristics for memristive elements in pattern recognition systems
-
F. Corinto, A. Ascoli, and M. Gilli, "Analysis of current-voltage characteristics for memristive elements in pattern recognition systems," Int. J. Circuit Theory Appl., vol. 40, pp. 1277-1320, 2012.
-
(2012)
Int. J. Circuit Theory Appl.
, vol.40
, pp. 1277-1320
-
-
Corinto, F.1
Ascoli, A.2
Gilli, M.3
-
15
-
-
63349111176
-
On SPICE macromodelling of TiO memristors
-
S. Benderli and T. A. Wey, "On SPICE macromodelling of TiO memristors," Electron. Lett., vol. 45, pp. 377-379, 2009.
-
(2009)
Electron. Lett.
, vol.45
, pp. 377-379
-
-
Benderli, S.1
Wey, T.A.2
-
16
-
-
67651052543
-
The elusive memristor: Properties of basic electrical circuits
-
Y. N. Joglekar and S. J. Wolf, "The elusive memristor: Properties of basic electrical circuits," Eur. J. Phys., vol. 30, pp. 661-675, 2009.
-
(2009)
Eur. J. Phys.
, vol.30
, pp. 661-675
-
-
Joglekar, Y.N.1
Wolf, S.J.2
-
17
-
-
70350457460
-
SPICE model of memristor with nonlinear dopant drift
-
Z. Biolek, D. Biolek, and V. Biolkova, "SPICE model of memristor with nonlinear dopant drift," Radioengineering, vol. 18, pp. 210-214, 2009.
-
(2009)
Radioengineering
, vol.18
, pp. 210-214
-
-
Biolek, Z.1
Biolek, D.2
Biolkova, V.3
-
18
-
-
77949878247
-
Compact models for memristors based on charge-flux constitutive relationships
-
Apr.
-
S. Shin, K. Kim, and S. M. Kang, "Compact models for memristors based on charge-flux constitutive relationships," IEEE Trans. Comput-Aided Des. Integr.Circuits Sys, vol. 29, no. 4, pp. 590-598, Apr. 2010.
-
(2010)
IEEE Trans. Comput-Aided Des. Integr. Circuits Sys
, vol.29
, Issue.4
, pp. 590-598
-
-
Shin, S.1
Kim, K.2
Kang, S.M.3
-
19
-
-
80052102359
-
A versatile memristor model with nonlinear dopant kinetics
-
Sep.
-
T. Prodromakis, B. P. Peh, C. Papavassiliou, and C. Toumazou, "A versatile memristor model with nonlinear dopant kinetics," IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 3099-3105, Sep. 2011.
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, Issue.9
, pp. 3099-3105
-
-
Prodromakis, T.1
Peh, B.P.2
Papavassiliou, C.3
Toumazou, C.4
-
20
-
-
84863705823
-
A boundary condition-based approach to the modeling of memristor nanostructures
-
Nov.
-
F. Corinto and A. Ascoli, "A boundary condition-based approach to the modeling of memristor nanostructures," IEEE Trans. Circuits Syst. I: Reg. Papers, vol. 59, no. 11, pp. 2713-2726, Nov. 2012.
-
(2012)
IEEE Trans. Circuits Syst. I: Reg. Papers
, vol.59
, Issue.11
, pp. 2713-2726
-
-
Corinto, F.1
Ascoli, A.2
-
21
-
-
84878290517
-
Memristor model comparison
-
2nd quarter
-
A. Ascoli, F. Corinto, V. Senger, and R. Tetzlaff, "Memristor model comparison," IEEE Circuits Syst. Mag., vol. 13, no. 2, pp. 89-105, 2nd quarter 2013.
-
(2013)
IEEE Circuits Syst. Mag.
, vol.13
, Issue.2
, pp. 89-105
-
-
Ascoli, A.1
Corinto, F.2
Senger, V.3
Tetzlaff, R.4
-
22
-
-
84884909509
-
Composite behavior of multiple memristor circuits
-
Oct.
-
R. K. Budhathoki, M. P. Sah, S. P. Adhikari, H. Kim, and L. Chua, "Composite behavior of multiple memristor circuits," IEEE Trans. Circuits Syst. I: Reg. Papers, vol. 60, no. 10, pp. 2688-2700, Oct. 2013.
-
(2013)
IEEE Trans. Circuits Syst. I: Reg. Papers
, vol.60
, Issue.10
, pp. 2688-2700
-
-
Budhathoki, R.K.1
Sah, M.P.2
Adhikari, S.P.3
Kim, H.4
Chua, L.5
-
23
-
-
70350092588
-
Switching dynamics in titanium dioxide memristive devices
-
M. D. Pickett, D. B. Strukov, J. L. Borghetti, J. J. Yang, G. S. Snider, D. R. Stewart, and R. S. Williams, "Switching dynamics in titanium dioxide memristive devices," J. Appl. Phys., vol. 106, p. 074508, 2009.
-
(2009)
J. Appl. Phys.
, vol.106
, pp. 074508
-
-
Pickett, M.D.1
Strukov, D.B.2
Borghetti, J.L.3
Yang, J.J.4
Snider, G.S.5
Stewart, D.R.6
Williams, R.S.7
-
25
-
-
84883349576
-
Physics-based memristor models
-
R. S. Williams, M. D. Pickett, and J. P. Strachan, "Physics-based memristor models," in Proc. IEEE Int. Symp. Circuits and Systems (ISCAS), 2013, pp. 217-220.
-
(2013)
Proc. IEEE Int. Symp. Circuits and Systems (ISCAS)
, pp. 217-220
-
-
Williams, R.S.1
Pickett, M.D.2
Strachan, J.P.3
-
26
-
-
80053572395
-
Memristive synapses are becoming reality
-
M. Laiho, E. Lehtonen, A. Russel, and P.Dudek, "Memristive synapses are becoming reality," Neuromorphic Eng., 2010.
-
(2010)
Neuromorphic Eng
-
-
Laiho, M.1
Lehtonen, E.2
Russel, A.3
Dudek, P.4
-
27
-
-
79959342648
-
Synaptic behaviors and modeling of a metal oxide memristive device
-
T. Chang, S.-H. Jo, K.-H. Kim, P. Sheridan, S. Gaba, and W. Lu, "Synaptic behaviors and modeling of a metal oxide memristive device," Appl. Phys. A-Mater. Sci. Process., vol. 102, pp. 857-863, 2011.
-
(2011)
Appl. Phys. A-Mater. Sci. Process
, vol.102
, pp. 857-863
-
-
Chang, T.1
Jo, S.-H.2
Kim, K.-H.3
Sheridan, P.4
Gaba, S.5
Lu, W.6
-
28
-
-
84872100046
-
TEAM: ThrEshold adaptive memristor model
-
Jan.
-
S. Kvatinsky, E. G. Friedman, A. Kolodny, and U. C.Weiser, "TEAM: ThrEshold adaptive memristor model," IEEE Trans. Circuits Syst. I: Reg. Papers, vol. 60, no. 1, pp. 211-221, Jan. 2013.
-
(2013)
IEEE Trans. Circuits Syst. I: Reg. Papers
, vol.60
, Issue.1
, pp. 211-221
-
-
Kvatinsky, S.1
Friedman, E.G.2
Kolodny, A.3
Weiser, U.C.4
-
29
-
-
84880865494
-
Generalized memristive device SPICE model and its application in circuit design
-
Aug.
-
C. Yakopcic, T. M. Taha, G. Subramanyam, and R. E. Pino, "Generalized memristive device SPICE model and its application in circuit design," IEEE Trans. Comput.-Aided Des. Integrated Circuits Syst., vol. 32, no. 8, pp. 1201-1214, Aug. 2013.
-
(2013)
IEEE Trans. Comput.-Aided Des. Integrated Circuits Syst.
, vol.32
, Issue.8
, pp. 1201-1214
-
-
Yakopcic, C.1
Taha, T.M.2
Subramanyam, G.3
Pino, R.E.4
-
30
-
-
85012046738
-
-
New York NY USA: Springer
-
C. Yakopcic, T. M. Taha, G. Subramanyam, and R. E. Pino, Advances in Neuromorphic Memristor Science and Applications-Memristor SPICE Modeling. New York, NY, USA: Springer, 2012, pp. 211-244.
-
(2012)
Advances in Neuromorphic Memristor Science and Applications-Memristor SPICE Modeling
, pp. 211-244
-
-
Yakopcic, C.1
Taha, T.M.2
Subramanyam, G.3
Pino, R.E.4
-
31
-
-
33751538494
-
A novel reference scheme for reading passive resistive crossbar memories
-
DOI 10.1109/TNANO.2006.885016
-
J. Mustafa and R. Waser, "A novel reference scheme for reading passive resistive crossbar memories," IEEE Trans. Nanotechnol., vol. 5, no. 6, pp. 687-691, Nov. 2006. (Pubitemid 44837050)
-
(2006)
IEEE Transactions on Nanotechnology
, vol.5
, Issue.6
, pp. 687-691
-
-
Mustafa, J.1
Waser, R.2
-
32
-
-
77955765782
-
Compact method for modeling and simulation of memristor devices: Ion conductor chalcogenide-based memristor devices
-
R. E. Pino, J. W. Bohl, N. McDonald, B. Wysocki, P. Rozwood, K. A. Campbell, A. Oblea, and A. Timilsina, "Compact method for modeling and simulation of memristor devices: Ion conductor chalcogenide-based memristor devices," in Proc. IEEE/ACM Int. Symp. Nanoscale Architectures, 2010, pp. 1-4.
-
(2010)
Proc. IEEE/ACM Int. Symp. Nanoscale Architectures
, pp. 1-4
-
-
Pino, R.E.1
Bohl, J.W.2
McDonald, N.3
Wysocki, B.4
Rozwood, P.5
Campbell, K.A.6
Oblea, A.7
Timilsina, A.8
-
33
-
-
84871803750
-
Uniform complementary resistive switching in tantalum oxide using current sweeps
-
Jan.
-
S. Schmelzer, E. Linn, U. Böttger, and R. Waser, "Uniform complementary resistive switching in tantalum oxide using current sweeps," IEEE Electron Device Lett., vol. 34, no. 1, pp. 114-116, Jan. 2013.
-
(2013)
IEEE Electron Device Lett
, vol.34
, Issue.1
, pp. 114-116
-
-
Schmelzer, S.1
Linn, E.2
Böttger, U.3
Waser, R.4
-
34
-
-
82555171565
-
Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches
-
S. Menzel, M. Waters, A. Marchewka, U. Böttger, R. Dittmann, and R. Waser, "Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches," Adv. Funct. Mater., vol. 21, pp. 4487-4492, 2011.
-
(2011)
Adv. Funct. Mater.
, vol.21
, pp. 4487-4492
-
-
Menzel, S.1
Waters, M.2
Marchewka, A.3
Böttger, U.4
Dittmann, R.5
Waser, R.6
-
35
-
-
84893847378
-
Weibull analysis of the kinetics of resistive switches based on tantalum oxide thin films
-
Y. Nishi, S. Schmelzer, U. Böttger, and R. Waser, "Weibull analysis of the kinetics of resistive switches based on tantalum oxide thin films," in Proc. 43rd Eur. Solid-State Device Research Conf. (ESSDERC), 2013, pp. 174-177.
-
(2013)
Proc. 43rd Eur. Solid-State Device Research Conf. (ESSDERC)
, pp. 174-177
-
-
Nishi, Y.1
Schmelzer, S.2
Böttger, U.3
Waser, R.4
-
36
-
-
79952640478
-
Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
-
S. Yu, Y. Wu, and H. Wong, "Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory," Appl. Phys. Lett., vol. 98, p. 103514, 2011.
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 103514
-
-
Yu, S.1
Wu, Y.2
Wong, H.3
-
37
-
-
84856173450
-
High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
-
F. Alibart, L. Gao, B. D. Hoskins, and D. B. Strukov, "High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm," Nanotechnology, vol. 23, p. 75201, 2012.
-
(2012)
Nanotechnology
, vol.23
, pp. 75201
-
-
Alibart, F.1
Gao, L.2
Hoskins, B.D.3
Strukov, D.B.4
-
38
-
-
77951622926
-
Complementary resistive switches for passive nanocrossbar memories
-
E. Linn, R. Rosezin, C. Kügeler, and R. Waser, "Complementary resistive switches for passive nanocrossbar memories," Nat. Mater., vol. 9, pp. 403-406, 2010.
-
(2010)
Nat. Mater.
, vol.9
, pp. 403-406
-
-
Linn, E.1
Rosezin, R.2
Kügeler, C.3
Waser, R.4
-
39
-
-
79960642086
-
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta TaO bilayer structures
-
M. J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y. B. Kim, C. J. Kim, D. H. Seo, S. Seo, U. I. Chung, I. K. Yoo, and K. Kim, "A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta TaO bilayer structures," Nat. Mater., vol. 10, pp. 625-630, 2011.
-
(2011)
Nat. Mater.
, vol.10
, pp. 625-630
-
-
Lee, M.J.1
Lee, C.B.2
Lee, D.3
Lee, S.R.4
Chang, M.5
Hur, J.H.6
Kim, Y.B.7
Kim, C.J.8
Seo, D.H.9
Seo, S.10
Chung, U.I.11
Yoo, I.K.12
Kim, K.13
-
40
-
-
84905372232
-
-
Boca Raton FL USA: CRC Press
-
E. Linn, S. Menzel, R. Rosezin, U. Böttger, R. Bruchhaus, and R. Waser, Nanoelectronic Device Applications Handbook: Modeling of Complementary Resistive Switches. Boca Raton, FL, USA: CRC Press, 2013.
-
(2013)
Nanoelectronic Device Applications Handbook: Modeling of Complementary Resistive Switches
-
-
Linn, E.1
Menzel, S.2
Rosezin, R.3
Böttger, U.4
Bruchhaus, R.5
Waser, R.6
-
41
-
-
82955219638
-
Pinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be 'self-crossing'
-
D. Biolek, Z. Biolek, and V. Biolkova, "Pinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be 'self-crossing'," Electron. Lett., vol. 47, pp. 1385-1387, 2011.
-
(2011)
Electron. Lett.
, vol.47
, pp. 1385-1387
-
-
Biolek, D.1
Biolek, Z.2
Biolkova, V.3
-
42
-
-
84858984014
-
Modeling complementary resistive switches by nonlinear memristive systems
-
E. Linn, S. Menzel, R. Rosezin, U. Böttger, R. Bruchhaus, and R. Waser, "Modeling complementary resistive switches by nonlinear memristive systems," in Proc. 11th IEEE Conf. Nanotechnology, 2011, pp. 1474-1478.
-
(2011)
Proc. 11th IEEE Conf. Nanotechnology
, pp. 1474-1478
-
-
Linn, E.1
Menzel, S.2
Rosezin, R.3
Böttger, U.4
Bruchhaus, R.5
Waser, R.6
-
43
-
-
79953272066
-
Dynamical properties and design analysis for nonvolatile memristor memories
-
Apr.
-
Y. Ho, G.M. Huang, and P. Li, "Dynamical properties and design analysis for nonvolatile memristor memories," IEEE Trans. Circuits Syst. I: Reg. Papers, vol. 58, no. 4, pp. 724-736, Apr. 2011.
-
(2011)
IEEE Trans. Circuits Syst. I: Reg. Papers
, vol.58
, Issue.4
, pp. 724-736
-
-
Ho, Y.1
Huang, G.M.2
Li, P.3
-
44
-
-
46749093701
-
Memristive switching mechanism for metal/oxide/metal nanodevices
-
J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, "Memristive switching mechanism for metal/oxide/metal nanodevices," Nat. Nanotechnol., vol. 3, p. 429, 2008.
-
(2008)
Nat. Nanotechnol.
, vol.3
, pp. 429
-
-
Yang, J.J.1
Pickett, M.D.2
Li, X.3
Ohlberg, D.A.A.4
Stewart, D.R.5
Williams, R.S.6
-
45
-
-
84876740438
-
Switching kinetics of electrochemical metallization memory cells
-
S. Menzel, S. Tappertzhofen, R. Waser, and I. Valov, "Switching kinetics of electrochemical metallization memory cells," Phys. Chem. Chem. Phys., vol. 15, pp. 6945-6952, 2013.
-
(2013)
Phys. Chem. Chem. Phys.
, vol.15
, pp. 6945-6952
-
-
Menzel, S.1
Tappertzhofen, S.2
Waser, R.3
Valov, I.4
-
46
-
-
77951026760
-
Nanoscale memristor device as synapse in neuromorphic systems
-
S.H. Jo, T. Chang, I. Ebong, B.B. Bhadviya, P.Mazumder, andW.Lu, "Nanoscale memristor device as synapse in neuromorphic systems," Nano Lett., vol. 10, pp. 1297-1301, 2010.
-
(2010)
Nano Lett
, vol.10
, pp. 1297-1301
-
-
Jo, S.H.1
Chang, T.2
Ebong, I.3
Bhadviya, B.B.4
Mazumder, P.5
Lu, W.6
-
47
-
-
84883502868
-
Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications
-
E. Linn, S. Menzel, S. Ferch, and R. Waser, "Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications," Nanotechnology, vol. 24, p. 384008, 2013.
-
(2013)
Nanotechnology
, vol.24
, pp. 384008
-
-
Linn, E.1
Menzel, S.2
Ferch, S.3
Waser, R.4
-
48
-
-
84855921198
-
Simulation of multilevel switching in electrochemical metallization memory cells
-
S. Menzel, U. Böttger, and R. Waser, "Simulation of multilevel switching in electrochemical metallization memory cells," J. Appl. Phys., vol. 111, p. 014501, 2012.
-
(2012)
J. Appl. Phys.
, vol.111
, pp. 014501
-
-
Menzel, S.1
Böttger, U.2
Waser, R.3
|