Analysis and modeling of resistive switching statistics

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Long, Shibing ^a,b   Cagli, Carlo ^c   Ielmini, Daniele ^c   Liu, Ming ^a   Suñé, Jordi ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS AND MODELING; APPLICATION EXAMPLES; BASIC STRUCTURE; CELL-BASED; CONDUCTING FILAMENT; DETERMINISTIC MODELS; EXPERIMENTAL DATA; GEOMETRICAL MODELS; HIGH RELIABILITY; INITIAL RESISTANCE; INITIAL STATE; KEY PARAMETERS; MODELING APPROACH; NON-VOLATILE MEMORIES; ON-STATE RESISTANCE; PARALLEL PATH; PERCOLATION MODELS; PHYSICS-BASED; PHYSICS-BASED MODELS; RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; REVERSIBLE SWITCHING; SCALE FACTOR; SINGLE PATH; STATISTICAL SAMPLES; STATISTICAL VARIATIONS; SWITCHING CYCLES; SWITCHING DYNAMICS; SWITCHING MECHANISM; SWITCHING PARAMETERS; THERMAL DISSOLUTION; VARIABLE WIDTH; WEIBULL MODELS; WEIBULL SLOPE;

DYNAMICS; LEAKAGE CURRENTS; NICKEL OXIDE; PERCOLATION (SOLID STATE); RANDOM ACCESS STORAGE; STATISTICS; SWITCHING; SWITCHING SYSTEMS; TRANSIENTS;

WEIBULL DISTRIBUTION;

EID: 84861720646     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3699369     Document Type: Conference Paper

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