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Applied Physics Letters

Volumn 99, Issue 6, 2011, Pages

Conduction mechanism of TiNHfO xPt resistive switching memory: A trap-assisted-tunneling model

(3) Yu, Shimeng a Guan, Ximeng a Wong, H S Philip a

a Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; EXPERIMENTAL DATA; IV CHARACTERISTICS; MEMORY STACK; METAL OXIDES; POOLE-FRENKEL MODEL; RESISTIVE SWITCHING MEMORIES; STATE-DEPENDENT; SWITCHING VOLTAGES; TRAP ENERGY; TUNNELING DISTANCE;

METALLIC COMPOUNDS; SWITCHING SYSTEMS;

PLATINUM;

EID: 84856981036 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3624472 Document Type: Article

Times cited : (364)

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