AlGaN devices and growth of device structures

Journal of Materials Science

Volumn 50, Issue 9, 2015, Pages 3267-3307

  Jones, K A ^a   Chow, T P ^b   Wraback, M ^a   Shatalov, M ^c   Sitar, Z ^d   Shahedipour, F ^e   Udwary, K ^f   Tompa, G S ^g  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^d North Carolina State University   (United States)

^e STATE UNIVERSITY OF NEW YORK   (United States)

^f KYMA TECHNOLOGIES INC   (United States)

^g STRUCTURED MATERIALS INDUSTRIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM GALLIUM ARSENIDE; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; DRAIN CURRENT; EFFICIENCY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH TEMPERATURE APPLICATIONS; III-V SEMICONDUCTORS; OHMIC CONTACTS; OPTICAL DEVICES; POWER HEMT; SAPPHIRE; SEMICONDUCTOR ALLOYS; SUBSTRATES;

CURRENT BLOCKING LAYERS; DISLOCATION DENSITIES; HIGH DISLOCATION DENSITY; HIGH POWER ELECTRONICS; PULSED POWER APPLICATIONS; RADIATIVE RECOMBINATION; SPECIFIC CONTACT RESISTANCES; THREADING DISLOCATION DENSITIES;

SILICON;

EID: 84923701838     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-015-8878-3     Document Type: Review

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