High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 435-437

  Cai, Yong ^a   Zhou, Yugang ^a   Chen, Kevin J ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN; Enhancement mode; Fluoride; High electron mobility transistor (HEMT); Plasma treatment; Threshold voltage

Indexed keywords

CURRENT DENSITY; FLUORINE COMPOUNDS; GALLIUM NITRIDE; LEAKAGE CURRENTS; PLASMA APPLICATIONS; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ENHANCEMENT MODE; FLUORIDE; PLASMA TREATMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 22944461728     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851122     Document Type: Article

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