The effect of Al on Ga desorption during gas source-molecular beam epitaxial growth of AlGaN

Applied Physics Letters

Volumn 72, Issue 1, 1998, Pages 85-87

  Jenny, J R ^a   Van Nostrand, J E ^a   Kaspi, R ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002232251     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120652     Document Type: Article

References (11)

1. M. E. Lin, H. Morkoç, and S. Strite, Aluminum, Gallium, and Indium Nitrides: Physical Properties, in The Encyclopedia of Advanced Materials, edited by Robert C. Cahn et al. (Elsevier Science, Tarrytown, NY, 1994), p. 79.
2. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).
3. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
4. R. F. Davis, J. Vac. Sci. Technol. A 11, 829 (1993).
5. C. T. Foxon, T. S. Cheng, S. E. Hooper, L. C. Jenkins, J. W. Orton, D. E. Lacklison, S. V. Novikov, T. B. Popova, and V. V. Tret'yakov, J. Vac. Sci. Technol. B 14, 2346 (1996).
6. C. R. Jones, T. Lei, R. Kaspi, and K. R. Evans, Mater. Res. Soc. Symp. Proc. 395, 141 (1995).
7. J. R. Jenny, K. Evans, and R. Kaspi, J. Cryst. Growth 175/176, 89 (1997).
8. M. Kamp, M. Mayer, A. Pelzmann, and K. J. Ebeling, MRS Internet J. Nitride Semicond. Res. 2, 26 (1997).
9. D. Crawford, R. Held, A. M. Johnston, A. M. Dabiran, and P. I. Cohen, MRS Internet J. Nitride Semicond. Res. 1, 12 (1996).
10. K. R. Evans, T. Lei, and C. R. Jones, Solid-State Electron. 41, 339 (1997).
11. R. Kaspi and K. R. Evans, Mater. Res. Soc. Symp. Proc. 280, 73 (1993).