Growth and characteristics of Fe-doped GaN

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 513-517

  Heikman, Sten ^a   Keller, S ^a   Mates, T ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a Santa Barbara   (United States)

Author keywords

A1. Doping; A1. Segregation; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY;

IRON DOPING;

GALLIUM NITRIDE;

EID: 0037291849     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01926-7     Document Type: Conference Paper

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