A vertical insulated gate AlGaN/GaN heterojunction field-effect transistor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 20-24, 2007, Pages

  Kanechika, Masakazu ^a   Sugimoto, Masahiro ^b   Soejima, Narumasa ^a   Ueda, Hiroyuki ^a   Ishiguro, Osamu ^a   Kodama, Masahito ^a   Hayashi, Eiko ^a   Itoh, Kenji ^a   Uesugi, Tsutomu ^a   Kachi, Tetsu ^a  

^a Rd Management Section   (Japan)

^b TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

AlGaN; Field effect transistor (FET); GaN; GaN substrate; Heterojunction; Heterostructure; Insulated gate; Vertical

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC RESISTANCE; ELECTRODES; HETEROJUNCTIONS; THRESHOLD VOLTAGE;

ELECTRON CURRENT; GATE ELECTRODES; HETEROJUNCTION FIELD-EFFECT TRANSISTOR (HFET);

FIELD EFFECT TRANSISTORS;

EID: 34547829020     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L503     Document Type: Article

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