Bulk ammonothermal GaN

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 3015-3018

  Dwilinski R ^a   Doradzinski R ^a   Garczynski J ^a   Sierzputowski, L P ^a   Puchalski, A ^a   Kanbara, Y ^b   Yagi, K ^b   Minakuchi, H ^b   Hayashi, H ^b  

^a AMMONO Sp Zoo   (Poland)

^b NICHIA CORPORATION   (Japan)

Author keywords

A1. X ray diffraction; A2. Ammonothermal crystal growth; A2. Growth from solutions; B1. Gallium nitride

Indexed keywords

A1. X-RAY DIFFRACTION; A2. AMMONOTHERMAL CRYSTAL GROWTH; A2. GROWTH FROM SOLUTIONS; AMMONOTHERMAL; B1. GALLIUM NITRIDE; CRYSTALLINITY; HIGH QUALITY; LATTICE CURVATURE; LOW-DISLOCATION DENSITY; STRUCTURAL CHARACTERIZATION;

CRYSTAL GROWTH; CRYSTALLIZATION; DIFFRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; GRAIN BOUNDARIES; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

DISLOCATIONS (CRYSTALS);

EID: 65749085084     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.052     Document Type: Article

References (31)

1. Nakamura S., and Fosol G. The Blue Laser Diode (1998), Springer, Berlin
2. Morkoc H. Nitride Semiconductors and Devices (1999), Springer, Heidelberg
3. Łucznik B., Pastuszka B., Grzegory I., Boćkowski M., Kamler G., Litwin-Staszewska E., and Porowski S. J. Crystal Growth 281 (2005) 38
4. Porowski S. Mater. Sci. Eng. B 44 (1997) 407
5. Grzegory I., Boćkowski M., Łucznik B., Krukowski S., Romanowski Z., Wróblewski M., and Porowski S. J. Crystal Growth 246 (2002) 177
6. Yamane H., Shimada M., Clarke S.J., and DiSalvo F.J. Chem. Mater. 9 (1997) 413
7. Kawamura F., Umeda H., Morishita M., Kawahara M., Yoshimura M., Mori Y., Sasaki T., and Kitaoka Y. Jpn. J. Appl. Phys. 45 (2006) L1136
8. Byrappa K., and Yoshimura M. Handbook of Hydrothermal Technology (2001), Noyes Publications
9. Dwilinski R., Wysmolek A., Baranowski J., Kaminska M., Doradzinski R., Garczynski J., and Sierzputowski L. Acta Phys. Pol. 88 5 (1995) 833
10. Dwilinski R., Baranowski J., Kaminska M., Doradzinski R., Garczynski J., and Sierzputowski L. Acta Phys. Pol. 90 4 (1996) 763
11. Dwilinski R., Doradzinski R., Garczynski J., Sierzputowski L., Baranowski J., and Kaminska M. Mater. Sci. Eng. B 50 (1997) 46
12. Palczewska M., Suchanek B., Dwilinski R., Pakula K., Wagner A., and Kaminska M. MRS Internet J. Nitride Semicond. Res. 3 (1998) 45
13. Kolis J.W., Wilcenski S., and Laudise R.A. Mater. Res. Soc. Symp. Proc. 495 (1998) 367
14. Ketchum D.R., and Kolis J.W. J. Crystal Growth 222 (2001) 431
15. Purdy A.P. Chem. Mater. 11 (1999) 1648
16. Yoshikawa A., Ohshima E., Fukuda T., Tsuji H., and Oshima K. J. Crystal Growth 260 (2004) 67
17. R.T. Dwilinski, R.M. Doradzinski, J.S. Garczynski, L.P. Sierzputowski, Y. Kanbara, Polish Patent Application No. P-347918 (06.06.2001).
18. R.T. Dwilinski, R.M. Doradzinski, J.S. Garczynski, L.P. Sierzputowski, Y. Kanbara, International Patent Application No. PCT/IB02/04185 (17.05.2002).
19. R.T. Dwilinski, R.M. Doradzinski, J.S. Garczynski, L.P. Sierzputowski, Y. Kanbara, United States Patent No. 6,656,615.B2 (02.12.2003).
20. Wang B., and Callahan M.J. Cryst. Growth Des. 6 (2006) 1227
21. Hashimoto T., Fujito K., Haskell B.A., Fini P.T., Speck J.S., and Nakamura S. J. Crystal Growth 275 (2005) e525
22. Hashimoto T., Fujito K., Sharma R., Letts E.R., Fini P.T., Speck J.S., and Nakamura S. J. Crystal Growth 291 (2006) 100
23. D'Evelyn M.P., Hong H.C., Park D.-S., Lu H., Kaminsky E., Melkote R.R., Perlin P., Leszczynski M., Porowski S., and Molnar R.J. J. Crystal Growth 300 (2007) 11
24. Purdy A.P. Cryst. Growth Des. 2 2 (2002) 141
25. Purdy A.P., Cas A.C., and Muratore N. J. Crystal Growth 252 (2003) 136
26. Kagamitani Y., Ehrentraut D., Yoshikawa A., Hoshino N., Fukuda T., Tsuji H., and Oshima K. Jpn. J. Appl. Phys. 45 (2006) 4018
27. Hashimoto T., Fujito K., Saito M., Speck J.S., and Nakamura S. Jpn. J. Appl. Phys. 44 (2005) L1570
28. Fukuda T., and Ehrentraut D. J. Crystal Growth 305 (2007) 304
29. R. Dwilinski, R. Doradzinski, L. Sierzputowski, J. Garczynski, M. Rudzinski, M. Zajac, J. Crystal Growth (2009), in press, doi:10.1016/jcrysgro.2009.01.078
30. R.T. Dwilinski, R.M. Doradzinski, J. Garczynski, L.P. Sierzputowski, Y. Kanbara, International Patent Application No. PCT\PL2005\00036 (10.06.2005)
31. D. Ehrentraut, Y. Kagamitani, Ch. Yokoyama, T. Fukuda, J. Cryst. Growth 310 (2008) 891.