Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Nature

Volumn 484, Issue 7393, 2012, Pages 223-227

  Kobayashi, Yasuyuki ^a   Kumakura, Kazuhide ^a   Akasaka, Tetsuya ^a   Makimoto, Toshiki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; BORON NITRIDE; GALLIUM; GALLIUM NITRIDE; NONMETAL; SAPPHIRE; UNCLASSIFIED DRUG;

ELECTRON; ELECTRONIC EQUIPMENT; MOBILITY; SEMICONDUCTOR INDUSTRY; SUBSTRATE;

ARTICLE; CRYSTAL STRUCTURE; DEVICES; ELECTRON; LIGHT EMITTING DIODE; LUMINESCENCE; PRIORITY JOURNAL; QUANTUM MECHANICS; ROOM TEMPERATURE; SEMICONDUCTOR; STRUCTURE ANALYSIS;

EID: 84859621828     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature10970     Document Type: Article

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