CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion

IEEE Electron Device Letters

Volumn 33, Issue 1, 2012, Pages 41-43

  Chowdhury, Srabanti ^a   Wong, Man Hoi ^a   Swenson, Brian L ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

AlGaN GaN; current aperture vertical electron transistor (CAVET); Mg implanted; plasma MBE

Indexed keywords

ALGAN/GAN; BLOCKING VOLTAGE; CURRENT APERTURES; CURRENT BLOCKING LAYERS; DIRECT-CURRENT; DRIFT REGIONS; GAN SUBSTRATE; GATE OVERLAP; HIGH VOLTAGE DEVICES; MG-IMPLANTED; ON-STATE RESISTANCE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; PLASMA-MBE; VERTICAL ELECTRONS;

CAPACITANCE MEASUREMENT; DISPERSIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PLASMA DEPOSITION; PLASMAS;

GALLIUM NITRIDE;

EID: 84655160777     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2173456     Document Type: Article

References (13)

1. B. J. Baliga, "Semiconductors for high voltage, vertical channel FETs," J. Appl. Phys., vol. 53, no. 3, pp. 1759-1764, Mar. 1982. (Pubitemid 12524221)
2. A. Q. Huang, "New unipolar switching power device figure of merits," IEEE Electron Device Lett., vol. 25, no. 5, pp. 298-301, May 2004.
3. S. L. Selvaraj, T. Suzue, and T. Egawa, "Breakdown enhancement of AlGaN/GaN HEMTs on 4-in silicon by improving the GaN quality on thick buffer layers," IEEE Electron Device Lett., vol. 30, no. 6, pp. 587-589, Jun. 2009.
4. B. Lu and T. Palacios, "High breakdown (1500 V) AlGaN/GaN HEMTs by substrate-transfer technology," IEEE Electron Device Lett., vol. 31, no. 9, pp. 951-953, Sep. 2010.
5. R. Chu, A. Corrion, M. Chen, L. Ray, D. Wong, D. Zehnder, B. Hughes, and K. Boutros, "1200-V normally Off GaN-on-Si field-effect transistors with low dynamic on-resistance," IEEE Electron Device Lett., vol. 32, no. 5, pp. 632-634, May 2011.
6. Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, S. P. Denbaars, and U. K. Mishra, "High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates," IEEE Electron Device Lett., vol. 27, no. 9, pp. 713-715, Sep. 2006. (Pubitemid 44355884)
7. I. Ben-Yaacov, Y.-K. Seck, U. K. Mishra, and S. P. Denbaars, "Al-GaN/GaN current aperture vertical electron transistors with regrown channels," J. Appl. Phys., vol. 95, no. 4, pp. 2073-2078, Feb. 2004.
8. M. Kanechika, M. Sugimoto, N. Soeima, H. Ueda, O. Ishiguro, M. Kodama, E. Hayashi, K. Itoh, T. Uesugi, and T. Kachi, "A vertical insulated gate AlGaN/GaN hetrojunction field effect transisitor," Jpn. J. Appl. Phys., vol. 46, no. 21, pp. L503-L505, Jun. 2007. (Pubitemid 47245315)
9. S. Chowdhury, B. L Swenson, and U. K. Mishra, "Enhancement and depletionMode AlGaN/GaN CAVET with Mg-Ion-implanted GaN as current blocking layer," IEEE Electron Device Lett., vol. 29, no. 6, pp. 543-545, Jun. 2008. (Pubitemid 351791448)
10. H. Xing, D. S. Green, H. Yu, T. Mates, P. Kozodoy, S. Keller, S. P. DenBaars, and U. K. Mishra, "Memory effect and redistribution of mg into sequentially regrown GaN layerby metalorganic chemical vapor deposition," Jpn. J. Appl. Phys., vol. 42, no. 1, pp. 50-53, Jan. 2003.
11. S. Chowdhury, B. L. Swensson, J. Lu, and U. K. Mishra, "Use of subnanometer thick AlN to arrest diffusion of ion-implanted Mg into regrown AlGaN/GaN layers," Jpn. J. Appl. Phys., vol. 50, no. 10, pp. 101 002-1-101 002-5, Oct. 2011.
12. D. S. Green, U. K. Mishra, and J. S. Speck, "Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy," J. Appl. Phys., vol. 95, no. 12, pp. 8456-8462, Jun. 2008.
13. F. Recht, L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, J. S. Speck, and U. K. Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature," IEEE Electron Device Lett., vol. 27, no. 4, pp. 205-207, Apr. 2006.