Some effects of oxygen impurities on AlN and GaN

Journal of Crystal Growth

Volumn 246, Issue 3-4, 2002, Pages 287-298

  Slack, Glen A ^a,b   Schowalter, Leo J ^a,b   Morelli, Donald ^c   Freitas Jr , Jaime A ^d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Crystal IS Inc   (United States)

^c DELPHI CORPORATION   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

A1. Characterization; A1. Defects; A1. Impurities; A2. Growth from vapor; B2. Semiconducting aluminium compounds; B2. Semiconducting gallium compounds

Indexed keywords

CHARACTERIZATION; CRYSTAL IMPURITIES; LIGHT ABSORPTION; LUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL CONDUCTIVITY;

OXYGEN IMPURITIES;

OXYGEN;

EID: 0037121725     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01753-0     Document Type: Conference Paper

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