231-261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

Applied Physics Letters

Volumn 91, Issue 7, 2007, Pages

  Hirayama, Hideki ^a   Yatabe, Tohru ^b   Noguchi, Norimichi ^b   Ohashi, Tomoaki ^b   Kamata, Norihiko ^b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; AMMONIA; MULTILAYERS; QUANTUM EFFICIENCY; SAPPHIRE; WAVELENGTH;

PULSE-FLOW MULTILAYER GROWTH; ROOM TEMPERATURE; THREADING DISLOCATION DENSITY;

LIGHT EMITTING DIODES;

EID: 34548013533     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2770662     Document Type: Article

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