Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts

IEEE Electron Device Letters

Volumn 26, Issue 5, 2005, Pages 283-285

  Yu, Haijiang ^a   McCarthy, L ^a   Rajan, S ^a   Keller, S ^a   Denbaars, S ^a   Speck, J ^a   Mishra, U ^a  

^a University of California   (United States)

Author keywords

GaN; High electron mobility transistor (HEMT); Ion implantation

Indexed keywords

GALLIUM NITRIDE; ION IMPLANTATION; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON;

CONTACT RESISTANCE; NONALLOYED OHMIC CONTACT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 19044383175     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.846583     Document Type: Article

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