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Applied Physics Letters

Volumn 85, Issue 20, 2004, Pages 4669-4671

Silicon doping dependence of highly conductive n-type Al 0.7Ga 0.3N

(5) Zhu, K a Nakarmi, M L a Kim, K H a Lin, J Y a Jiang, H X a

a KANSAS STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION PROFILES; EFFECTIVE MASS; FLOW RATE; VARIABLES;

ACTIVATION ENERGY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SUBSTRATES; X RAY DIFFRACTION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 10944240550 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1825055 Document Type: Article

Times cited : (51)

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