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Volumn 91, Issue 13, 2007, Pages

Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; DISLOCATIONS (CRYSTALS); RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 34848828800     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2790813     Document Type: Article
Times cited : (21)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.