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Volumn 194, Issue 2 SPEC., 2002, Pages 524-527
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Heteroepitaxial growth of GaN on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
DESORPTION;
DISLOCATIONS (CRYSTALS);
ETCHING;
HYDROGEN;
MOLECULAR BEAM EPITAXY;
NUCLEATION;
PLASMA SOURCES;
PYROMETERS;
SILICON CARBIDE;
SUBSTRATES;
TEMPERATURE MEASUREMENT;
TRANSMISSION ELECTRON MICROSCOPY;
CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY;
DEFECT DENSITY;
HETEROEPITAXIAL GROWTH;
PLAN-VIEW TRANSMISSION ELECTRON MICROSCOPY;
PLASMA ASSISTED MOLECULAR BEAM EPITAXY;
THREADING DISLOCATION;
GALLIUM NITRIDE;
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EID: 0036960285
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(200212)194:2<524::AID-PSSA524>3.0.CO;2-N Document Type: Article |
Times cited : (32)
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References (6)
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