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Volumn 194, Issue 2 SPEC., 2002, Pages 524-527

Heteroepitaxial growth of GaN on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; DISLOCATIONS (CRYSTALS); ETCHING; HYDROGEN; MOLECULAR BEAM EPITAXY; NUCLEATION; PLASMA SOURCES; PYROMETERS; SILICON CARBIDE; SUBSTRATES; TEMPERATURE MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0036960285     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<524::AID-PSSA524>3.0.CO;2-N     Document Type: Article
Times cited : (32)

References (6)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.