Ion implantation of Si, Mg and C into Al0.12Ga0.88N

Solid-State Electronics

Volumn 41, Issue 5, 1997, Pages 703-706

  Polyakov, A Y ^a   Shin, M ^a   Skowronski, M ^a   Wilson, R G ^b   Greve, D W ^a   Pearton, S J ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b Hughes Aircraft Co   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; CARBON; CARRIER CONCENTRATION; ION IMPLANTATION; MAGNESIUM; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; TERNARY SYSTEMS;

AVERAGE ELECTRON CONCENTRATION;

SEMICONDUCTING FILMS;

EID: 0031145693     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00182-7     Document Type: Article

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