SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

(5) Mita, S a Collazo, R a Rice, A a Dalmau, R F a Sitar, Z a

a North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL PROPERTIES; CHEMICAL REACTIONS; GALLIUM; GALLIUM ALLOYS; GALLIUM NITRIDE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; METALLIZING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SUPERSATURATION; VAPORS;

CHEMICAL VAPORS; GAN GROWTH; GROWTH INTERFACES; LOW PRESSURE (LP);

VAPOR DEPOSITION;

EID: 47749121789 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2952027 Document Type: Article

Times cited : (116)

References (30)

1
- 0005985130
- 0021-8979 10.1063/1.371145.
- S. J. Pearton, J. C. Zopler, R. J. Shul, and F. Ren, J. Appl. Phys. 0021-8979 10.1063/1.371145 86, 1 (1999).
- (1999) J. Appl. Phys. , vol.86 , pp. 1
- Pearton, S.J.¹ Zopler, J.C.² Shul, R.J.³ Ren, F.⁴

2
- 0004167140
- (Springer, New York).
- H. Morko̧, Nitride Semiconductors and Devices (Springer, New York, 2007).
- (2007) Nitride Semiconductors and Devices
- Morko̧, H.¹

3
- 0023040588
- 0003-6951 10.1063/1.96549.
- H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 0003-6951 10.1063/1.96549 48, 353 (1986).
- (1986) Appl. Phys. Lett. , vol.48 , pp. 353
- Amano, H.¹ Sawaki, N.² Akasaki, I.³ Toyoda, Y.⁴

4
- 33645224792
- 0021-8979 10.1063/1.2178660.
- J. Narayan, P. Pant, A. Chugh, H. Choi, and J. C. C. Fan, J. Appl. Phys. 0021-8979 10.1063/1.2178660 99, 054313 (2006).
- (2006) J. Appl. Phys. , vol.99 , pp. 054313
- Narayan, J.¹ Pant, P.² Chugh, A.³ Choi, H.⁴ Fan, J.C.C.⁵

5
- 0034504518
- 0022-0248 10.1016/S0022-0248(00)00691-6.
- I. Akasaki, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(00)00691-6 221, 231 (2000).
- (2000) J. Cryst. Growth , vol.221 , pp. 231
- Akasaki, I.¹

6
- 13444284876
- M. Sumiya and S. Fuke, MRS Internet J. Nitride Semicond. Res. 9, 1 (2004).
- (2004) MRS Internet J. Nitride Semicond. Res. , vol.9 , pp. 1
- Sumiya, M.¹ Fuke, S.²

7
- 30344467838
- 0022-0248 10.1016/j.jcrysgro.2005.10.080.
- R. Collazo, S. Mita, A. Aleksov, R. Schlesser, and Z. Sitar, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2005.10.080 287, 586 (2006).
- (2006) J. Cryst. Growth , vol.287 , pp. 586
- Collazo, R.¹ Mita, S.² Aleksov, A.³ Schlesser, R.⁴ Sitar, Z.⁵

8
- 0033079861
- 0022-0248 10.1016/S0022-0248(98)00894-X.
- A. Koukitu, T. Taki, N. Takahashi, and H. Seki, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(98)00894-X 197, 99 (1999).
- (1999) J. Cryst. Growth , vol.197 , pp. 99
- Koukitu, A.¹ Taki, T.² Takahashi, N.³ Seki, H.⁴

9
- 0035855103
- 0953-8984 10.1088/0953-8984/13/32/303.
- A. Koukitu and Y. Kumagai, J. Phys.: Condens. Matter 0953-8984 10.1088/0953-8984/13/32/303 13, 6907 (2001).
- (2001) J. Phys.: Condens. Matter , vol.13 , pp. 6907
- Koukitu, A.¹ Kumagai, Y.²

10
- 0000067621
- W. K. Burton, N. Cabrera, and F. C. Frank, Philos. Trans. R. Soc. London, Ser. A 243, 300 (1951).
- (1951) Philos. Trans. R. Soc. London, Ser. A , vol.243 , pp. 300
- Burton, W.K.¹ Cabrera, N.² Frank, F.C.³

11
- 0032583019
- 0003-6951 10.1063/1.122735.
- K. Saarinen, P. Seppälä, J. Oila, P. Hautojärvi, C. Corbel, O. Briot, and R. L. Aulombard, Appl. Phys. Lett. 0003-6951 10.1063/1.122735 73, 3253 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 3253
- Saarinen, K.¹ Seppälä, P.² Oila, J.³ Hautojärvi, P.⁴ Corbel, C.⁵ Briot, O.⁶ Aulombard, R.L.⁷

12
- 1242265229
- 0003-6951 10.1063/1.1643540.
- A. Armstrong, A. R. Arehart, B. Moran, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. A. Ringel, Appl. Phys. Lett. 0003-6951 10.1063/1.1643540 84, 374 (2004).
- (2004) Appl. Phys. Lett. , vol.84 , pp. 374
- Armstrong, A.¹ Arehart, A.R.² Moran, B.³ Denbaars, S.P.⁴ Mishra, U.K.⁵ Speck, J.S.⁶ Ringel, S.A.⁷

13
- 33748695552
- 0003-6951 10.1063/1.2348740.
- D. G. Zhao, H. Yang, J. J. Zhu, D. S. Jiang, Z. S. Liu, S. M. Zhang, Y. T. Wang, and J. W. Liang, Appl. Phys. Lett. 0003-6951 10.1063/1.2348740 89, 112106 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 112106
- Zhao, D.G.¹ Yang, H.² Zhu, J.J.³ Jiang, D.S.⁴ Liu, Z.S.⁵ Zhang, S.M.⁶ Wang, Y.T.⁷ Liang, J.W.⁸

14
- 0001262038
- 0003-6951 10.1063/1.121668.
- A. F. Wright and J. Furthmüller, Appl. Phys. Lett. 0003-6951 10.1063/1.121668 72, 3467 (1998).
- (1998) Appl. Phys. Lett. , vol.72 , pp. 3467
- Wright, A.F.¹ Furthmüller, J.²

15
- 0001517557
- 0268-1242 10.1088/0268-1242/13/3/010.
- J. W. Orton and C. T. Foxon, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/13/3/010 13, 310 (1998).
- (1998) Semicond. Sci. Technol. , vol.13 , pp. 310
- Orton, J.W.¹ Foxon, C.T.²

16
- 0036906374
- 0021-8979 10.1063/1.1518794.
- C. H. Seager, A. F. Wright, J. Yu, and W. Götz, J. Appl. Phys. 0021-8979 10.1063/1.1518794 92, 6553 (2002).
- (2002) J. Appl. Phys. , vol.92 , pp. 6553
- Seager, C.H.¹ Wright, A.F.² Yu, J.³ Götz, W.⁴

17
- 85010812746
- 0003-6951 10.1063/1.117767.
- J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 0003-6951 10.1063/1.117767 69, 503 (1996).
- (1996) Appl. Phys. Lett. , vol.69 , pp. 503
- Neugebauer, J.¹ Van De Walle, C.G.²

18
- 0001223298
- 0003-6951 10.1063/1.125789.
- Y. Xin, E. M. James, I. Arslan, S. Sivananthan, N. D. Browning, S. J. Pennycook, F. Omǹs, B. Beaumont, J. -P. Faurie, and P. Gibart, Appl. Phys. Lett. 0003-6951 10.1063/1.125789 76, 466 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 466
- Xin, Y.¹ James, E.M.² Arslan, I.³ Sivananthan, S.⁴ Browning, N.D.⁵ Pennycook, S.J.⁶ Omǹs, F.⁷ Beaumont, B.⁸ Faurie, J.-P.⁹ Gibart, P.¹⁰

19
- 33748454510
- 0003-6951 10.1063/1.2244046.
- A. Aleksov, R. Collazo, S. Mita, R. Schlesser, and Z. Sitar, Appl. Phys. Lett. 0003-6951 10.1063/1.2244046 89, 052117 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 052117
- Aleksov, A.¹ Collazo, R.² Mita, S.³ Schlesser, R.⁴ Sitar, Z.⁵

20
- 36348955637
- 0031-8957
- S. Mita, R. Collazo, R. Dalmau, and Z. Sitar, Phys. Status Solidi C 4, 2260 (2007). 0031-8957
- (2007) Phys. Status Solidi C , vol.4 , pp. 2260
- Mita, S.¹ Collazo, R.² Dalmau, R.³ Sitar, Z.⁴

21
- 77951217554
- 0013-4651 10.1149/1.2404322.
- V. S. Ban, J. Electrochem. Soc. 0013-4651 10.1149/1.2404322 119, 761 (1972).
- (1972) J. Electrochem. Soc. , vol.119 , pp. 761
- Ban, V.S.¹

22
- 0017994694
- 0013-4651 10.1149/1.2131641.
- S. S. Liu and D. A. Stevenson, J. Electrochem. Soc. 0013-4651 10.1149/1.2131641 125, 1161 (1978).
- (1978) J. Electrochem. Soc. , vol.125 , pp. 1161
- Liu, S.S.¹ Stevenson, D.A.²

23
- 0001586589
- 0003-6951 10.1063/1.1314877.
- H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel, Appl. Phys. Lett. 0003-6951 10.1063/1.1314877 77, 2145 (2000).
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2145
- Heinke, H.¹ Kirchner, V.² Einfeldt, S.³ Hommel, D.⁴

24
- 4944250116
- 0003-6951 10.1063/1.1784034.
- D. G. Zhao, J. J. Zhu, Z. S. Liu, S. M. Zhang, H. Yang, and D. S. Jiang, Appl. Phys. Lett. 0003-6951 10.1063/1.1784034 85, 1499 (2004).
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1499
- Zhao, D.G.¹ Zhu, J.J.² Liu, Z.S.³ Zhang, S.M.⁴ Yang, H.⁵ Jiang, D.S.⁶

25
- 36449003657
- 0003-6951 10.1063/1.113294.
- D. L. Rode and D. K. Gaskill, Appl. Phys. Lett. 0003-6951 10.1063/1.113294 66, 1972 (1995).
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1972
- Rode, D.L.¹ Gaskill, D.K.²

26
- 0001556024
- 0021-8979 10.1063/1.365963.
- U. V. Bhapkar and M. S. Shur, J. Appl. Phys. 0021-8979 10.1063/1.365963 82, 1649 (1997).
- (1997) J. Appl. Phys. , vol.82 , pp. 1649
- Bhapkar, U.V.¹ Shur, M.S.²

27
- 0032048780
- 0021-8979 10.1063/1.366585.
- N. G. Weimann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 0021-8979 10.1063/1.366585 83, 3656 (1998).
- (1998) J. Appl. Phys. , vol.83 , pp. 3656
- Weimann, N.G.¹ Eastman, L.F.² Doppalapudi, D.³ Ng, H.M.⁴ Moustakas, T.D.⁵

28
- 33645504237
- 0021-8979 10.1063/1.2168028.
- J. H. You, J. Q. Lu, and H. T. Johnson, J. Appl. Phys. 0021-8979 10.1063/1.2168028 99, 033706 (2006).
- (2006) J. Appl. Phys. , vol.99 , pp. 033706
- You, J.H.¹ Lu, J.Q.² Johnson, H.T.³

29
- 7244252899
- 0163-1829 10.1103/PhysRevB.51.17255.
- P. Bogusawski, E. L. Briggs, and J. Bernholc, Phys. Rev. B 0163-1829 10.1103/PhysRevB.51.17255 51, 17255 (1995).
- (1995) Phys. Rev. B , vol.51 , pp. 17255
- Bogusawski, P.¹ Briggs, E.L.² Bernholc, J.³

30
- 0001394391
- 1478-6435
- W. T. Read, Philos. Mag. 45, 775 (1945). 1478-6435
- (1945) Philos. Mag. , vol.45 , pp. 775
- Read, W.T.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.