A 1100+ V AlGaN/GaN-based planar Schottky barrier diode without edge termination

Chinese Physics Letters

Volumn 28, Issue 1, 2011, Pages

  Cao, Dong Sheng ^a   Lu, Hai ^a,b   Chen, Dun Jun ^a   Han, Ping ^a   Zhang, Rong ^a   Zheng, You Dou ^a  

^a NANJING UNIVERSITY   (China)

^b NANJING ELECTRONIC DEVICES INSTITUTE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; GALLIUM ALLOYS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; IONIZATION OF GASES; PHASE INTERFACES; SEMICONDUCTOR ALLOYS; TWO DIMENSIONAL ELECTRON GAS;

CONTACT SPACINGS; EDGE TERMINATION; FULLY DEPLETED; GAN BASED; LINEAR DEPENDENCE; REVERSE LEAKAGE CURRENT; REVERSE-BIAS; SCHOTTKY CONTACTS; SUPERJUNCTIONS; TWO-DIMENSIONAL ELECTRON GASES (2DEG);

SCHOTTKY BARRIER DIODES;

EID: 78751479257     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/1/017303     Document Type: Article

References (17)

1. Chen W J, Wong K Y and Chen K J 2009 IEEE Electron. Device Lett. 30 430
2. Ohno Y and Kuzuhawa M 2001 IEEE Trans. Electron. Devices 48 517
3. Saito W, Kuraguchi M, Takada Y, Tsuda K, Omura I and Ogura T 2005 IEEE Trans. Electron. Devices 52 159
4. Hsu J W P, Manfra M J, Lang D V, Richter S, Chu S N G, Sergent A M, Kleiman R N, Pferfer L N and Molnar R J 2001 Appl. Phys. Lett. 78 1685
5. Arslan E, Butun S and Ozbay E 2009 Appl. Phys. Lett. 94 142106
6. Hasegawa H and Oyama S 2002 J. Vac. Sci. Technol. B 20 1647
7. Miller E J, Yu E T, Waltereit P and Speck J S 2004 Appl. Phys. Lett. 84 535
8. Remashan K, Huang W P and Chyi J I 2007 Microelectron. Eng. 84 2907
9. Ishida H, Shibata D, Yanagihara M, Uemoto Y, Matsuo H, Ueda T, Tanaka T and Ueda D 2008 IEEE Electron. Device Lett. 29 1087
10. Miyoshi M, Kuraoka Y, Asai K, Shibata T, Tanaka M and Egawa T 2007 Electron. Lett. 43 953
11. Wu Y F, Keller B P, Keller S, Kapolnek D, Kozodoy P, Denbarrs S P and Mishra U K 1996 Appl. Phys. Lett. 69 1438
12. Arulkumaran S, Egawa T, Ishikawa H and Jimbo T 2004 Appl. Phys. Lett. 84 613
13. del Alamo J A and Joh J 2009 Microelectron. Reliab. 49 1200
14. Xing H L, Dora Y, Chini A, Heikman S, Keller S and Mishra U K 2004 IEEE Electron. Device Lett. 25 161
15. Ibbetson J P, Fini P T, Ness K D, Denbaars S P, Speck J S and Mishra U K 2000 Appl. Phys. Lett. 77 250
16. Tirado J M, Sanchez-Rojas J L and Izpura J I 2006 Semicond. Sci. Technol. 21 1150
17. Wen C P, Wang J Y, Hao Y L and Shen B 2008 2008 9th International Conference on Solid-State and Integrated-Circuit Technology 1-4 1086 (Peking University, Beijing 20-23 October 2008)