Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 353-360

  Marino, Fabio Alessio ^a,b   Faralli, Nicolas ^a   Palacios, Tomás ^c   Ferry, David K ^a   Goodnick, Stephen M ^a   Saraniti, Marco ^a  

^a Arizona State University   (United States)

^b UNIVERSITY OF PADOVA   (Italy)

^c Department of Electrical Engineering and Computer Science   (United States)

Author keywords

Dislocations; GaN; High electron mobility transistor (HEMT); High frequency; Monte Carlo; Numerical simulation

Indexed keywords

ADJUSTABLE PARAMETERS; ALGAN/GAN; CELLULAR MONTE CARLO; COMMERCIAL SOFTWARE; DEVICE OPERATIONS; DISLOCATION EFFECTS; EXPERIMENTAL DATA; FULL BAND; GAN HEMTS; HIGH FREQUENCY HF; HIGH-POWER; MONTE CARLO NUMERICAL SIMULATIONS; PHONON SPECTRUM; RF PERFORMANCE; THERMAL SIMULATIONS; THREAD DISLOCATION; THREADING DISLOCATION; THREADING EDGE DISLOCATION; THRESHOLD CONCENTRATIONS;

COMPUTER SIMULATION; EDGE DISLOCATIONS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; MONTE CARLO METHODS; PHOTODEGRADATION; SINGLE CRYSTALS; TRANSPORT PROPERTIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 73349126090     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2035024     Document Type: Article

References (32)

1. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, M. M. K. Chu, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures," J. Appl. Phys., vol.85, no.6, pp. 323-3222, 1999.
2. M. Higashiwaki and T. Matsui, "AlGaN/GaN heterostructure field-effect transistors with current gain cut-off frequency of 152 GHz on sapphire substrates," Jpn. J. Appl. Phys., vol.44, no.16, pp. L475-L478, Apr. 2005.
3. R. Akis, J. Ayubi-Moak, N. Faralli, D. K. Ferry, S. M. Goodnick, and M. Saraniti, "The upper limit of the cutoff frequency in ultrashort gate-length InGaAs/InAlAs HEMTs: A new definition of effective gate length," IEEE Electron Device Lett., vol.29, no.4, pp. 306-308, Apr. 2008.
4. F. Schwierz and J. Liou, Modern Microwave Transistors: Theory, Design, and Performance. New York: Wiley, 2003.
5. M. Higashiwaki and T. Matsui, "30-nm-gate AlGaN/GaN heterostructure field-effect transistors with a current-gain cutoff frequency of 181 GHz," Jpn. J. Appl. Phys., vol.45, no.42, pp. L1 111-L1 113, Oct. 2006.
6. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "AlGaN/GaN high electron mobility transistors with InGaN back-barriers," IEEE Electron Device Lett., vol.27, no.1, pp. 13-15, Jan. 2006.
7. G. Simin, X. Hu, A. Tarakji, J. Zhang, A. Koudymov, S. Saygi, J. Yang, A. Khan, M. S. Shur, and R. Gaska, "AlGaN/InGaN/GaN double heterostructure field-effect transistor," Jpn. J. Appl. Phys., vol. 40, no. 11A, pp. L1 142-L1 144, Nov. 2001.
8. R. P. Joshi, S. Viswanadha, B. Jogai, P. Shah, and R. D. del Rosario, "Analysis of dislocation scattering on electron mobility in GaN high electron mobility transistors," J. Appl. Phys., vol.93, no.12, pp. 10 046-10 052, Jun. 2003.
9. N. Weimann, L. Eastman, D. Doppalapudi, H. Ng, and T. Moustakas, "Scattering of electrons at threading dislocations in GaN," J. Appl. Phys., vol.83, no.7, pp. 3656-3659, Apr. 1998.
10. W. T. Read, "Theory of dislocations in germanium," Philos. Mag., vol.45, no.367, pp. 775-796, Aug. 1954.
11. W. T. Read, "Statistics of the occupation of dislocation acceptor centres," Philos. Mag., vol.45, no.370, pp. 1119-1128, Nov. 1954.
12. W. T. Read, "Scattering of electrons by charged dislocations in semiconductors," Philos. Mag., vol.46, no.373, pp. 111-131, Feb. 1955.
13. V. Bonch-Bruevich and V. Glasko, "The theory of electron states connected with dislocations. I. Linear dislocations," Fiz. Tverd. Tela, vol.3, p. 36, Jun. 1961.
14. B. Podor, "Electron mobility in plastically deformed germanium," Phys. Stat. Sol. B, vol.16, no.2, pp. K167-K169, Jul. 1966.
15. M. Saraniti and S. Goodnick, "Hybrid full-band cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors," IEEE Trans. Electron Devices, vol.47, no.10, pp. 1909-1915, Oct. 2000.
16. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. Eastman, "Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures," J. Phys., Condens. Matter, vol.14, no.13, pp. 3399-3434, Mar. 2002.
17. J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors," Appl. Phys. Lett., vol.77, no.2, pp. 250-252, Jul. 2000.
18. Synopsys, Inc., Sentaurus Device User's Manual, Mountain View, CA, 2008. Ver. y-2008.
19. G. Wachutka, "An extended thermodynamic model for the simultaneous simulation of the thermal and electrical behavior of semiconductor devices," in Proc. 6th Int. Conf. NASECODE, Jul. 1989, vol.5, pp. 409-414.
20. J. Chelikowsky and M. Cohen, "Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blend semiconductors," Phys. Rev. B, Condens. Matter, vol.14, no.2, pp. 556-582, Jul. 1976.
21. P. Keating, "Effect of invariance requirements on the elastic strain energy of crystal with application on diamond structure," Phys. Rev. Lett., vol.145, no.2, pp. 637-645, May 1966.
22. W. Hackbush, Multi-Grid Methods and Applications. Berlin, Germany: Springer-Verlag, 1985.
23. M. Saraniti, A. Rein, G. Zandler, P. Vogl, and P. Lugli, "An efficient multigrid Poisson solver for device simulations," IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol.15, no.2, pp. 141-150, Feb. 1996.
24. R. Hockney and J. Eastwood, Computer Simulation Using Particles. Bristol, U.K.: Adam Hilger, 1988.
25. M. Fischetti and S. Laux, "Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects," Phys. Rev. B, Condens. Matter, vol.38, no.14, pp. 9721-9745, Nov. 1988.
26. K. F. Brennan and A. S. Brown, Theory of Modern Electronic Semiconductor Devices. New York: Wiley, 2002.
27. S. Yamakawa, "Transport modeling in GaN materials and devices based on full-band cellular Monte Carlo simulation," Ph.D. dissertation, Arizona State Univ., Tempe, AZ, 2003.
28. A. Johnson, "Physical limitations on frequency and power parameters of transistors," RCA Rev., vol.26, pp. 163-177, Jun. 1965.
29. P. Das and D. Ferry, "Hot electron microwave conductivity of wide bandgap semiconductors," Jpn. J. Appl. Phys., vol.19, pp. 851-855, 1976.
30. T. Palacios, Y. Dora, A. Chakraborty, C. Sanabria, S. Keller, S. P. DenBaars, and U. K. Mishra, "Optimization of AlGaN/GaN HEMTs for high frequency operation," Phys. Stat. Sol. A, vol.203, no.7, pp. 1845-1850, May 2006.
31. M. Manasreh, III-V Nitride Semiconductors: Defects and Structural Properties. Amsterdam, The Netherlands: Elsevier, 2000.
32. M. N. Gurusinghe and T. G. Andersson, "Mobility in epitaxial GaN: Limitations of free-electron concentration due to dislocations and compensation," Phys. Rev. B, Condens. Matter, vol.67, no.23, p. 235 208, Jun. 2003.