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Applied Physics Letters

Volumn 101, Issue 21, 2012, Pages

Internal quantum efficiency in AlGaN with strong carrier localization

(6) Mickevicius J a Tamulaitis, G a Shur, M b Shatalov, M c Yang, J c Gaska, R c

a VILNIUS UNIVERSITY (Lithuania)

b RENSSELAER POLYTECHNIC INSTITUTE (United States)

c SENSOR ELECTRONIC TECHNOLOGY INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; ALGAN; ALGAN EPILAYERS; CARRIER LOCALIZATION; EMISSION EFFICIENCIES; EXCITATION POWER DENSITY; INTERNAL QUANTUM EFFICIENCY; PHOTOLUMINESCENCE INTENSITIES; WELL WIDTH;

PHOTOLUMINESCENCE; QUANTUM EFFICIENCY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84870045410 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4767657 Document Type: Article

Times cited : (55)

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