OMVPE growth and gas-phase reactions of AlGaN for UV emitters

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 291-296

  Han, J ^a   Figiel, J J ^a   Crawford, M H ^a   Banas, M A ^a   Bartram, M E ^a   Biefeld, R M ^a   Song, Y K ^b   Nurmikko, A V ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Brown University   (United States)

Author keywords

Diode; GaN; Gas phase reactions; LED; Quantum well

Indexed keywords

LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM WELL LASERS; REFLECTOMETERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; ULTRAVIOLET RADIATION;

GAS PHASE REACTIONS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032477106     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00675-7     Document Type: Article

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