Critical voltage for electrical degradation of GaN high-electron mobility transistors

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 287-289

  Joh, Jungwoo ^a   del Alamo, Jesús A ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

DC stress; Degradation; GaN; High electron mobility transistor (HEMT); Reliability

Indexed keywords

DEGRADATION; ELECTRIC POTENTIAL; HOT ELECTRONS; SEMICONDUCTING GALLIUM COMPOUNDS;

CRITICAL VOLTAGE; DRAIN-TO-GATE VOLTAGE; ELECTRICAL STRESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41749108640     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.917815     Document Type: Article

References (11)

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