High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2013-2015

  Shi, Junxia ^a   Choi, Y C ^a   Pophristic, M ^b   Spencer, M G ^a   Eastman, L F ^a  

^a School of Operations Research and Industrial Engineering   (United States)

^b Velox Semiconductor Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROJUNCTION; FABRICATED DEVICE; FIELD PLATES; GATE DRAIN; HIGH BREAKDOWN VOLTAGE; HIGH-POWER; SAPPHIRE SUBSTRATES; SELF-ALIGN; SOURCE AND DRAINS; SPECIFIC-ON-RESISTANCE; THEORETICAL LIMITS;

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; SAPPHIRE; SILICON CARBIDE;

FIELD EFFECT TRANSISTORS;

EID: 67649304004     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778691     Document Type: Conference Paper

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