Growth of high-quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 4, 2000, Pages 2290-2294

  Ploog, K H ^a   Brandt, O ^a   Muralidharan, R ^a   Thamm, A ^a   Waltereit, P ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23044522502     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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