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Volumn 296, Issue 1, 2006, Pages 31-42

CFD and reaction computational analysis of the growth of GaN by HVPE method

Author keywords

A1. Surface processes; A3. Hydride vapor phase epitaxy; B1. Gallium compounds; B1. Gallium nitride; B1. Nitrides

Indexed keywords

GAS APPROXIMATION; HYDRIDE VAPOR PHASE EPITAXY (HVPE); SURFACE PROCESSES; VAPOR TRANSPORT;

EID: 33749820320     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.08.008     Document Type: Article
Times cited : (26)

References (36)
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    • Fidap User Manual, Fluent Inc.
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    • B. Lucznik, B. Pastuszka, I. Grzegory, M. Boćkowski, J. Domagała, G. Nowak, P. Prystawko, S. Krukowski, S. Porowski. Proc ICNS Conf. 2005, Bremen, Germany, to be published
  • 21
    • 33749844222 scopus 로고    scopus 로고
    • I. Barin, Thermochemical Data of Pure Substances, 3rd ed., VCH Weinheim, 1994.
  • 29
    • 33749847735 scopus 로고    scopus 로고
    • S. Krukowski, I. Grzegory, M. Bockowski, M. Wroblewski, S. Porowski, J. Crystal Growth, submitted for publication.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.