Inversion layer carrier concentration and mobility in 4H-SiC metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 108, Issue 5, 2010, Pages

  Dhar, S ^a   Haney, S ^a   Cheng, L ^a   Ryu, S R ^a   Agarwal, A K ^a   Yu, L C ^b   Cheung, K P ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CURRENTS; CURRENT DEGRADATION; FREE CARRIER CONCENTRATION; FREE ELECTRON CONCENTRATION; GATE OXIDE; INVERSION CONDITIONS; INVERSION LAYER; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY MEASUREMENTS; MOBILITY MODEL; MODELING RESULTS; NITRIDED;

CARRIER CONCENTRATION; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

CARRIER MOBILITY;

EID: 77956839817     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3484043     Document Type: Article

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