AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%

Applied Physics Express

Volumn 5, Issue 8, 2012, Pages

  Shatalov, Max ^a   Sun, Wenhong ^a   Lunev, Alex ^a   Hu, Xuhong ^a   Dobrinsky, Alex ^a   Bilenko, Yuri ^a   Yang, Jinwei ^a   Shur, Michael ^b   Gaska, Remis ^a   Moe, Craig ^c   Garrett, Gregory ^c   Wraback, Michael ^c  

^a SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; CONTACT LAYERS; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; EXTERNAL QUANTUM EFFICIENCY; INTERNAL QUANTUM EFFICIENCY; LIGHT EXTRACTION; OUTPUT POWER; P-TYPE; SAPPHIRE SUBSTRATES; THREADING DISLOCATION DENSITIES;

OHMIC CONTACTS; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SAPPHIRE;

LIGHT EMITTING DIODES;

EID: 84865315562     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.082101     Document Type: Article

References (8)

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