Strain relaxation in AlGaN multilayer structures by inclined dislocations

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Follstaedt, D M ^a   Lee, S R ^a   Allerman, A A ^a   Floro, J A ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN LAYERS; ALN; BEND ANGLES; COMPRESSIVE STRAINS; DEFECT DIFFUSIONS; DISLOCATION CLIMBS; DISLOCATION CORES; DISLOCATION DENSITIES; DISLOCATION MICROSTRUCTURES; DYNAMIC GROWTHS; EPITAXIAL STRAINS; GA CONTENTS; GROWTH SURFACES; HETERO INTERFACES; HETEROSTRUCTURE; INCLINED THREADING DISLOCATIONS; INHOMOGENEITIES; INITIAL BENDING; LOCAL STRAIN FIELDS; LOCAL STRAINS; METAL-ORGANIC VAPOR PHASE EPITAXIES; MOLE FRACTIONS; MULTI-LAYER STRUCTURES; STRAIN STATE; SURFACE STEPS; TEM; TEMPLATE LAYERS; THREADING DISLOCATIONS; X-RAY DIFFRACTIONS; XRD;

CRYSTAL GROWTH; GALLIUM NITRIDE; LATTICE MISMATCH; SEMICONDUCTING GALLIUM; STRAIN CONTROL; STRAIN RELAXATION; SURFACE DIFFUSION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

STRAIN;

EID: 65449175992     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3087515     Document Type: Article

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