Cascode Connected AlGaN/GaN HEMT's on SiC Substrates

IEEE Microwave and Guided Wave Letters

Volumn 10, Issue 8, 2000, Pages 316-318

  Green, Bruce M ^a   Chu, Kenneth K ^b   Smart, Joseph A ^a   Tilak, Vinayak ^a   Kim, Hyungtak ^a   Shealy, James R ^a   Eastman, Lester F ^a  

^a Cornell University   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

Cascode; GaN; HEMT's; SiC

Indexed keywords

CASCODES; COMMON GATE DEVICE;

GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034238744     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.862226     Document Type: Article

References (10)

1. Y.-F. Wu, D. Kapolnek, J. Ibbetson, N.-Q. Zhang, P. Parikh, B. P. Keller, and U. K. Mishra, “High Al-content AlGaN/GaN HEMT's on SiC substrates with very high power performance,” in IEDM Tech. Dig., Washington, DC, Dec. 1999, pp. 925-927.
2. C. H. Chen, K. Krishamurthy, S. Keller, G. Parish, M. Rodwell, U. K. Mishra, and Y. F. Wu, “AlGaN/GaN dual-gate modulation-doped fieldeffect transistors,” Electron. Lett., vol. 35, pp. 933-935, May 1999.
3. J. J. Xu, Y. F. Wu, S. Keller, S. Heikman, B. J. Thibeault, U. K. Mishra, and R. A. York, “1-8 GHz GaN-based power amplifier using flip-chip bonding,” IEEE Microwave GuidedWave Lett., vol. 9, pp. 277-279, July 1999.
4. M. Schlechtweg, W. H. Haydl, A. Bangert, J. Braunstein, P. J. Tasker, L. Verweyen, H. Massler, W. Bronner, A. Hulsmann, and K. Kohler, “Coplanar millimeter-wave IC's for W-band applications using 0.15 μm pseudomorphic MODFET's,” IEEE J. Solid State Circuits, vol. 31, pp. 1426-1434, Oct. 1996.
5. J. L. Vorhaus, R. A. Pucel, and Y. Tajima, “Monolithic dual-gate FET digital phase shifters,” IEEE Trans. Microwave Theory Tech., vol. MTT-30, pp. 982-991, 1982.
6. M. Kumar, “Pre-distortion linearizer using GaAs dual-gate MESFETs for TWTA and SSPA used in sattllite transponders,” IEEE Trans. Microwave Theory Tech., vol. MTT-33, pp. 1479-1488, Dec. 1985.
7. J. A. Smart, A. T. Schremer, N. G. Weimann, O. Ambacher, L. F. Eastman, and J. R. Shealy, “AlGaN/GaN heterostructures on insulating AlGaN nucleation layers,” Appl. Phys. Lett., vol. 75, no. 3, pp. 388-390, July 19, 1999.
8. K. K. Chu, J. A. Smart, J. R. Shealy, and L. F. Eastman, “AlGaN/GaN piezoelectric HEMT's with submicron gates on sapphire,” in Proc. State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) XXIX, 1998.
9. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, “The role of surface passivation on the microwave characteristics of AlGaN/GaN HEMT's,” IEEE Electron Device Lett., vol. 21, pp. 268-270, June 2000.
10. L. F. Eastman and N. G. Weimann, “private communication,” unpublished.