Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

IEEE Electron Device Letters

Volumn 27, Issue 1, 2006, Pages 7-9

  Ducatteau, D ^a   Minko, A ^a   Hoel V ^a   Morvan, E ^b   Delos, E ^a   Grimbert, B ^a   Lahreche, H ^c   Bove, P ^c   Gaquiere C ^a   De Jaeger, J C ^a   Delage, S ^b  

^a UNIV LILLE   (France)

^b TRT   (France)

^c Picogiga International   (France)

Author keywords

AlGaN GaN; High electron mobility transistors (HEMTs); Power density; Si (111); Trapping effects

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES;

MICROWAVE FREQUENCY; OUTPUT POWER DENSITY; SILICON (111); TRAPPING EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33645524589     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.860385     Document Type: Article

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